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UFT200

Description
100 A, 400 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size228KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UFT200 Overview

100 A, 400 V, SILICON, RECTIFIER DIODE

UFT200 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components2
Processing package descriptionROHS COMPLIANT PACKAGE-2
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formUNSPECIFIED
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationULTRA FAST RECOVERY
Phase1
Maximum reverse recovery time0.0700 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current100 A
Maximum non-repetitive peak forward current1400 A

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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