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2N4126D27Z

Description
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size526KB,15 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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2N4126D27Z Overview

Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

2N4126D27Z Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
2N4126 / MMBT4126
2N4126
MMBT4126
C
E
C
B
TO-92
E
SOT-23
Mark: ZF
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch-
ing applications at collector currents to 10
µA
as a switch and to
100 mA as an amplifier.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25
25
4.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N4126
625
5.0
83.3
200
Max
*MMBT4126
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N4126/MMBT4126, Rev A

2N4126D27Z Related Products

2N4126D27Z 2N4126D75Z 2N4126D74Z 2N4126D26Z
Description Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 25 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 60 60 60
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz
Base Number Matches 1 1 1 1
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