MMSZ5262ET1G datasheet, PDF - EEWORLD Datasheet

MMSZ52xxET1G Series,

SZMMSZ52xxET1G Series

Zener Voltage Regulators

500 mW SOD−123 Surface Mount

Three complete series of Zener diodes are offered in the convenient,

surface mount plastic SOD−123 package. These devices provide a

convenient alternative to the leadless 34−package style.

Features

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

500 mW Rating on FR−4 or FR−5 Board

Wide Zener Reverse Voltage Range

−

2.4 V to 110 V

Package Designed for Optimal Automated Board Assembly

Small Package Size for High Density Applications

General Purpose, Medium Current

ESD Rating of Class 3 (> 16 kV) per Human Body Model

Peak Power

−

225 W (8

x

20

ms)

SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable



Pb−Free Packages are Available*

Mechanical Characteristics:

CASE:

Void-free, transfer-molded, thermosetting plastic case

FINISH:

Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

SOD−123

CASE 425

STYLE 1

1

Cathode

2

Anode

MARKING DIAGRAM

1

xxx M

G

260C for 10 Seconds

POLARITY:

Cathode indicated by polarity band

FLAMMABILITY RATING:

UL 94 V−0

MAXIMUM RATINGS

Rating

Peak Power Dissipation @ 20

ms

(Note 1)

@ T

L



25C

Total Power Dissipation on FR−5 Board,

(Note 3) @ T

L

= 75C

Derated above 75C

Thermal Resistance, (Note 2)

Junction−to−Ambient

Thermal Resistance, (Note 2)

Junction−to−Lead

Junction and Storage Temperature Range

Symbol

P

pk

P

D

Max

225

Units

W

xxx = Device Code (Refer to page 2)

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

MMSZ52xxET1G

Package

SOD−123

(Pb−Free)

SOD−123

(Pb−Free)

SOD−123

(Pb−Free)

Shipping

†

3,000 /

Tape & Reel

3,000 /

Tape & Reel

10,000 /

Tape & Reel

500

6.7

340

150

−55

to

+150

mW

mW/C

C/W

SZMMSZ52xxET1G

MMSZ52xxET3G

R

qJA

R

qJL

T

J

, T

stg

C/W

C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Nonrepetitive current pulse per Figure 11.

2. Thermal Resistance measurement obtained via infrared Scan Method.

3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking

column of the Electrical Characteristics table on page 2 of

this data sheet.



Semiconductor Components Industries, LLC, 2012

February, 2012

−

Rev. 8

1

Publication Order Number:

MMSZ5221ET1/D

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

ELECTRICAL CHARACTERISTICS

(T

A

= 25C unless

otherwise noted, V

F

= 0.95 V Max. @ I

F

= 10 mA)

Symbol

V

Z

I

ZT

Z

ZT

I

ZK

Z

ZK

I

R

V

R

I

F

V

F

Parameter

Reverse Zener Voltage @ I

ZT

Reverse Current

Maximum Zener Impedance @ I

ZT

Reverse Current

Maximum Zener Impedance @ I

ZK

Reverse Leakage Current @ V

R

Reverse Voltage

Forward Current

Forward Voltage @ I

F

V

Z

V

R

I

R

V

F

I

ZT

V

I

F

I

Zener Voltage Regulator

ELECTRICAL CHARACTERISTICS

(T

A

= 25C unless otherwise noted, V

F

= 0.9 V Max. @ I

F

= 10 mA)

Zener Voltage

(Notes 4 and 5)

Device

Marking

CA1

CA3

CA6

CA8

CA9

CB2

CB3

CB5

CB6

CB7

CB8

CC2

CC4

CC5

CC6

CC7

CC8

CD1

CD3

CD5

V

Z

(V)

Min

2.28

2.57

3.14

3.71

4.09

4.85

5.32

5.89

6.46

7.13

7.79

9.50

11.40

12.35

13.30

14.25

15.20

17.10

19.00

22.80

Nom

2.4

2.7

3.3

3.9

4.3

5.1

5.6

6.2

6.8

7.5

8.2

10

12

13

14

15

16

18

20

24

Max

2.52

2.84

3.47

4.10

4.52

5.36

5.88

6.51

7.14

7.88

8.61

10.50

12.60

13.65

14.70

15.75

16.80

18.90

21.00

25.20

@ I

ZT

mA

20

9.5

9.0

8.5

7.8

7.0

6.2

5.2

Zener Impedance

(Note 6)

Z

ZT

@ I

ZT

W

30

28

23

22

17

11

7

5

6

8

17

30

13

15

16

17

21

25

33

Z

ZK

@ I

ZK

W

1200

1300

1600

1900

2000

1600

1000

750

500

600

mA

0.25

Leakage Current

I

R

@ V

R

mA

100

75

25

10

5

3

1

0.5

0.1

V

1

2

3

4

5

6

6.5

8

9.1

9.9

10

11

12

14

15

18

Device*

MMSZ5221ET1G

MMSZ5223ET1G

MMSZ5226ET1G

MMSZ5228ET1G

MMSZ5229ET1G

MMSZ5231ET1G

MMSZ5232ET1G

MMSZ5234ET1G

MMSZ5235ET1G

MMSZ5236ET1G

MMSZ5237ET1G

MMSZ5240ET1G

MMSZ5242ET1G

MMSZ5243ET1G

MMSZ5244ET1G

MMSZ5245ET1G

MMSZ5246ET1G

MMSZ5248ET1G

MMSZ5250ET1G

MMSZ5252ET1G

4. The type numbers shown have a standard tolerance of

5%

on the nominal Zener voltage.

5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T

L

= 30C

1C.

6. Z

ZT

and Z

ZK

are measured by dividing the AC voltage drop across the device by the ac current applied.

The specified limits are for I

Z(AC)

= 0.1 I

Z(dc)

with the AC frequency = 1 kHz.

*Include SZ-prefix devices where applicable

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2

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

ELECTRICAL CHARACTERISTICS

(T

A

= 25C unless otherwise noted, V

F

= 0.9 V Max. @ I

F

= 10 mA)

Zener Voltage

(Notes 4 and 5)

Device

Marking

CD6

CD7

CD8

CD9

CE1

CE2

CE3

CE6

CE7

V

Z

(V)

Min

23.75

25.65

26.60

28.50

31.35

34.20

37.05

48.45

53.20

Nom

25

27

28

30

33

36

39

51

56

Max

26.25

28.35

29.40

31.50

34.65

37.80

40.95

53.55

58.80

@ I

ZT

mA

5.0

4.6

4.5

4.2

3.8

3.4

3.2

2.5

2.2

Zener Impedance

(Note 6)

Z

ZT

@ I

ZT

W

35

41

44

49

58

70

80

125

150

Z

ZK

@ I

ZK

W

600

700

800

1100

1300

mA

0.25

Leakage Current

I

R

@ V

R

mA

0.1

V

19

21

23

25

27

30

39

43

Device*

MMSZ5253ET1G

MMSZ5254ET1G

MMSZ5255ET1G

MMSZ5256ET1G

MMSZ5257ET1G

MMSZ5258ET1G

MMSZ5259ET1G

MMSZ5262ET1G

MMSZ5263ET1G

4. The type numbers shown have a standard tolerance of

5%

on the nominal Zener voltage.

5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T

L

= 30C

1C.

6. Z

ZT

and Z

ZK

are measured by dividing the AC voltage drop across the device by the ac current applied.

The specified limits are for I

Z(AC)

= 0.1 I

Z(dc)

with the AC frequency = 1 kHz.

*Include SZ-prefix devices where applicable

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3

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

TYPICAL CHARACTERISTICS

q

VZ

, TEMPERATURE COEFFICIENT (mV/C)

8

7

6

5

4

3

2

1

0

−1

−2

−3

V

Z

@ I

ZT

TYPICAL T

C

VALUES

FOR MMSZ5221BT1G SERIES

q

VZ

, TEMPERATURE COEFFICIENT (mV/C)

100

TYPICAL T

C

VALUES

FOR MMSZ5221BT1G SERIES

V

Z

@ I

ZT

10

2

3

4

5

6

7

8

9

10

V

Z

, NOMINAL ZENER VOLTAGE (V)

11

12

1

10

V

Z

, NOMINAL ZENER VOLTAGE (V)

100

Figure 1. Temperature Coefficients

(Temperature Range

−

55C to +150C)

1.2

P

D

, POWER DISSIPATION (WATTS)

1.0

0.8

0.6

0.4

0.2

0

25

50

75

100

T, TEMPERATURE (C)

125

P

D

versus T

A

P

D

versus T

L

1000

Figure 2. Temperature Coefficients

(Temperature Range

−

55C to +150C)

P

pk

, PEAK SURGE POWER (WATTS)

RECTANGULAR

WAVEFORM, T

A

= 25C

100

10

150

1

0.1

1

10

100

PW, PULSE WIDTH (ms)

1000

Figure 3. Steady State Power Derating

Figure 4. Maximum Nonrepetitive Surge Power

1000

Z

ZT

, DYNAMIC IMPEDANCE (W)

T

J

= 25C

I

Z(AC)

= 0.1 I

Z(DC)

f = 1 kHz

1000

I

F

, FORWARD CURRENT (mA)

75 V (MMSZ5267BT1)

91 V (MMSZ5270BT1)

I

Z

= 1 mA

5 mA

20 mA

10

100

10

150C

1

10

V

Z

, NOMINAL ZENER VOLTAGE

100

1

0.4

0.5

75C 25C

0C

1.1

1.2

0.6

0.7

0.8

0.9

1.0

V

F

, FORWARD VOLTAGE (V)

Figure 5. Effect of Zener Voltage on

Zener Impedance

Figure 6. Typical Forward Voltage

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4

MMSZ52xxET1G Series, SZMMSZ52xxET1G Series

TYPICAL CHARACTERISTICS

I

R

, LEAKAGE CURRENT (mA)

1000

0 V BIAS

1 V BIAS

T

A

= 25C

1000

100

10

1

0.1

0.01

+ 25C

−55C

0

10

20

30

40

50

60

70

V

Z

, NOMINAL ZENER VOLTAGE (V)

80

90

+150C

C, CAPACITANCE (pF)

100

BIAS AT

50% OF V

Z

NOM

10

0.001

0.0001

1

10

V

Z

, NOMINAL ZENER VOLTAGE (V)

100

0.00001

Figure 7. Typical Capacitance

Figure 8. Typical Leakage Current

100

I

Z

, ZENER CURRENT (mA)

100

T

A

= 25C

I

Z

, ZENER CURRENT (mA)

10

T

A

= 25C

10

1

0.1

0.01

0

2

4

6

8

V

Z

, ZENER VOLTAGE (V)

10

12

0.01

10

30

50

70

V

Z

, ZENER VOLTAGE (V)

90

Figure 9. Zener Voltage versus Zener Current

(V

Z

Up to 12 V)

Figure 10. Zener Voltage versus Zener Current

(12 V to 91 V)

100

% OF PEAK PULSE CURRENT

90

80

70

60

50

40

30

20

10

0

t

r

PEAK VALUE I

RSM

@ 8

ms

PULSE WIDTH (t

P

) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8

ms

HALF VALUE I

RSM

/2 @ 20

ms

t

P

20

40

t, TIME (ms)

60

80

Figure 11. 8



20

ms

Pulse Waveform

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5

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
package instruction	R-PDSO-G2
Contacts	2
Manufacturer packaging code	CASE 425-04
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	125 Ω
JESD-30 code	R-PDSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Nominal reference voltage	51 V
surface mount	YES
technology	ZENER
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	5%
Working test current	2.5 mA

	MMSZ5262ET1G	MMSZ5253ET1G	MMSZ5258ET1G	SZMMSZ52XXET1G
Description	27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE	27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE	225 W, Zener Diode Voltage Regulator, SOD-123 2 LEAD, 3000-REEL	27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	ZENER DIODE	ZENER DIODE	ZENER DIODE	VOLTAGE REGULATOR DIODE
Number of components	1	1	1	1
Number of terminals	2	2	2	2
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
surface mount	YES	YES	YES	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Working test current	2.5 mA	5 mA	3.4 mA	4.6 mA
package instruction	R-PDSO-G2	R-PDSO-G2	LEAD FREE, PLASTIC, CASE 425-04, 2 PIN	-
Contacts	2	2	2	-
Manufacturer packaging code	CASE 425-04	CASE 425-04	425-04	-
Reach Compliance Code	compli	compli	compliant	-
ECCN code	EAR99	EAR99	EAR99	-
Configuration	SINGLE	SINGLE	SINGLE	-
Maximum dynamic impedance	125 Ω	35 Ω	70 Ω	-
JESD-30 code	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	-
JESD-609 code	e3	e3	e3	-
Humidity sensitivity level	1	1	1	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	260	-
Maximum power dissipation	0.5 W	0.5 W	0.5 W	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
Nominal reference voltage	51 V	25 V	36 V	-
technology	ZENER	ZENER	ZENER	-
Terminal surface	Tin (Sn)	Tin (Sn)	MATTE TIN	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	30	-
Maximum voltage tolerance	5%	5%	5%	-

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