2N6895 datasheet, PDF - EEWORLD Datasheet

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2N6895: Description1160mA, 100V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size849KB，5 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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2N6895 Overview

1160mA, 100V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF

2N6895 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
Other features	RADIATION HARDENED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	1.16 A
Maximum drain-source on-resistance	3.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	30 pF
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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