PD-90885H
IRHN9150
JANSR2N7422U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number Radiation Level
IRHN9150
IRHN93150
100 kRads(Si)
300 kRads(Si)
RAD Hard™HEXFET
®
TECHNOLOGY
100V, P-CHANNEL
REF: MIL-PRF-19500/662
R
DS(on)
0.080
0.080
I
D
-22A
-22A
QPL Part Number
JANSR2N7422U
JANSF2N7422U
SMD - 1
Description
IR HiRel RADHard™ HEXFET
®
MOSFET technology provides
high performance power MOSFETs for space applications.
This technology has long history of proven performance and
reliability in satellite applications. These devices have been
characterized for both Total Dose and Single Event Effects
(SEE). The combination of low RDS(on) and low gate charge
reduces the power losses in switching applications such as DC
to DC converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as voltage
control, fast switching and temperature stability of electrical
parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= -12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
-22
-14
-88
150
1.2
± 20
500
-22
15
-23
-55 to + 150
300 ( for 5s)
2.6 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temp.
Weight
I
D2
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-12-11
IRHN9150
JANSR2N7422U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 ––– –––
––– -0.093 –––
––– ––– 0.080
––– ––– 0.085
-2.0 ––– -4.0
11
––– –––
––– ––– -25
––– ––– -250
––– ––– -100
––– ––– 100
––– ––– 200
––– –––
35
––– –––
48
––– –––
40
––– ––– 170
––– ––– 190
––– ––– 190
–––
–––
–––
–––
4.0
4300
1100
310
–––
–––
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -12V, I
D2
= -14A
V
GS
= -12V, I
D1
= -22A
V
DS
= V
GS
, I
D
= -1.0mA
V
DS
= -15V, I
D2
= -14A
V
DS
= -80V, V
GS
= 0V
V
DS
= -80V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
V
GS
= 20V
I
D1
= -22A
V
DS
= -50V
V
GS
= -12V
V
DD
= -50V
I
D1
= -22A
R
G
= 2.35
V
GS
= -12V
Measured from the center of
drain pad to center of source pad
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
ns
nH
pF
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-22
-88
-3.0
300
1.5
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= -22A, V
GS
= 0V
T
J
= 25°C, I
F
= -22A, V
DD
≤
-50V
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
R
J-PCB
Parameter
Junction-to-Case
Junction-to-PC board
(soldered to a 1”sq. copper-clad board)
Min.
–––
–––
Typ.
–––
6.6
Max.
0.83
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= -25V, starting T
J
= 25°C, L = 2.1mH, Peak I
L
= -22A, V
GS
= -12V
V
I
SD
-22A, di/dt
-450A/µs, V
DD
-100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. -12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. -80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-12-11
IRHN9150
JANSR2N7422U
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1)
Diode Forward Voltage
100 kRads (Si)
1
Min.
-100
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-4.0
-100
100
-25
0.080
0.080
-3.0
300k Rads (Si)
2
Min.
-100
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-5.0
-100
100
-25
0.080
0.080
-3.0
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= -1.0mA
V
DS
= V
GS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
= -80V, V
GS
= 0V
V
GS
= -12V, I
D2
= -14A
V
GS
= -12V, I
D2
= -14A
V
GS
= 0V, I
S
= -22A
Units
Test Conditions
1. Part numbers IRHN9150 (JANSR2N7422U)
2. Part numbers IRHN93150 (JANSF2N7422U)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm
2
))
Cu
Br
I
28
36.8
59.9
Energy
(MeV)
285
305
345
Range
(µm)
43
39
32.8
@ VGS =
0V
-100
-100
-60
@ VGS =
5V
-100
-100
–––
VDS (V)
@ VGS =
10V
-100
-70
–––
@ VGS =
15V
-70
-50
–––
@ VGS =
20V
-60
-40
–––
-120
-100
-80
VDS
-60
-40
-20
0
0
5
10
VGS
15
20
Cu
Br
I
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-12-11
IRHN9150
JANSR2N7422U
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
TOP
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-5.0V
-5.0V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
10
1
10
20µs PULSE WIDTH
T
J
= 25
°
C
100
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
Fig 2.
Typical Output Characteristics
3.0
I
D
= -22A
I
D
, Drain-to-Source Current (A)
2.5
T = 25
°
C
J
2.0
T = 150
°
C
J
1.5
1.0
0.5
-
10
V DS -50V
=
20µs PULSE WIDTH
5
-
6
7
8
9
10
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
7000
6000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
-V
GS
, Gate-to-Source Voltage (V)
V
GS
C
iss
C
rss
C
oss
=
=
=
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
I
D
= -22A
V
DS
= -80V
V
DS
= -50V
V
DS
= -20V
16
C, Capacitance (pF)
5000
4000
3000
2000
1000
0
C
iss
12
8
C
oss
4
C
rss
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2018-12-11
International Rectifier HiRel Products, Inc.
IRHN9150
JANSR2N7422U
Pre-Irradiation
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100s
10
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
DC
1000
-I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
T
J
= 25
°
C
-I D, Drain-to-Source Current (A)
1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
0.1
-V
SD
,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
1200
E
AS
, Single Pulse Avalanche Energy (mJ)
24
TOP
BOTTOM
20
1000
ID
-9.8A
-14A
-22A
-I
D
, Drain Current (A)
16
800
12
600
8
400
4
200
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Starting T
J
, Junction Temperature
(
°
C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
1
D = 0.50
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Thermal Response(Z
thJC
)
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLEPULSE
(THERM RESPONSE)
AL
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
International Rectifier HiRel Products, Inc.
2018-12-11
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