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IRHN9150A

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size371KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRHN9150A Overview

Power Field-Effect Transistor,

IRHN9150A Parametric

Parameter NameAttribute value
package instructionCHIP CARRIER, R-CBCC-N3
Reach Compliance Codecompliant
Other featuresRADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)22 A
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)88 A
GuidelineRH - 100K Rad(Si)
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)380 ns
Maximum opening time (tons)210 ns
Base Number Matches1
PD-90885H
IRHN9150
JANSR2N7422U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number Radiation Level
IRHN9150
IRHN93150
100 kRads(Si)
300 kRads(Si)
RAD Hard™HEXFET
®
TECHNOLOGY
100V, P-CHANNEL
REF: MIL-PRF-19500/662
R
DS(on)
0.080
0.080
I
D
-22A
-22A
QPL Part Number
JANSR2N7422U
JANSF2N7422U
SMD - 1
Description
IR HiRel RADHard™ HEXFET
®
MOSFET technology provides
high performance power MOSFETs for space applications.
This technology has long history of proven performance and
reliability in satellite applications. These devices have been
characterized for both Total Dose and Single Event Effects
(SEE). The combination of low RDS(on) and low gate charge
reduces the power losses in switching applications such as DC
to DC converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as voltage
control, fast switching and temperature stability of electrical
parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= -12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
-22
-14
-88
150
1.2
± 20
500
-22
15
-23
-55 to + 150
300 ( for 5s)
2.6 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temp.
Weight
I
D2
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-12-11

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