PD-94604D
IRHNA597064
JANSR2N7524U2
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA597064
IRHNA593064
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.016
0.016
I
D
-56A
-56A
QPL Part Number
JANSR2N7524U2
JANSF2N7524U2
SMD-2
60V, P-CHANNEL
REF: MIL-PRF-19500/733
R5
TECHNOLOGY
Description
IR HiRel R5 technology provides high performance
power MOSFETs for space applications. These devices
have been characterized for both Total Dose and Single
Event Effect (SEE) with useful performance up to LET of
80 (MeV/(mg/cm
2
). The combination of low R
DS
(on) and
low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers.
These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= -12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
300 (for 5s)
3.3 (Typical)
-56*
-56*
-224
250
2.0
± 20
725
-56
25
-2.1
-55 to + 150
I
D
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
2017-03-08
IRHNA597064
JANSR2N7524U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-60
––– –––
––– -0.064 –––
––– ––– 0.016
-2.0
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
7022
2897
267
-4.0
–––
-10
-25
-100
100
200
65
60
35
150
100
35
–––
–––
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -12V, I
D
= -56A
V
DS
= V
GS
, I
D
= -1.0mA
V
DS
= -15V, I
D
= -56A
V
DS
= -48V, V
GS
= 0V
V
DS
= -48V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -56A
V
DS
= -30V
V
GS
= -12V
V
DD
= -30V
I
D
= -56A
R
G
= 2.35
V
GS
= -12V
Measured from center of Drain
pad to center of Source pad
ns
nH
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-56
-224
-5.0
200
500
A
V
ns
nC
Test Conditions
T
J
=25°C, I
S
= -56A, V
GS
=0V
T
J
=25°C, I
F
= -56A,V
DD
≤
-25V
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
R
JC
R
J-PCB
Junction-to-Case
Junction-to-PC Board (Soldered to 2” sq copper clad board)
Min.
–––
–––
Typ.
–––
1.6
Max.
0.5
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= -30V, starting T
J
= 25°C, L = 0.46mH, Peak I
L
= -56A, V
GS
= -12V
V
I
SD
-56A, di/dt
-360A/µs, V
DD
-30V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. -12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. -48 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2017-03-08
IRHNA597064
JANSR2N7524U2
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
100 kRads (Si)
1
Min.
-60
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-4.0
-100
100
-10
0.016
0.016
-5.0
300 kRads (Si)
2
Min.
-60
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-5.0
-100
100
-10
0.016
0.016
-5.0
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= -1.0mA
V
DS
= V
GS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
= -48V, V
GS
= 0V
V
GS
= -12V, I
D
= -56A
V
GS
= -12V, I
D
= -56A
V
GS
= 0V, I
D
= -56A
Units
Test Conditions
1. Part numbers IRHNA597064, JANSR2N7524U2
2. Part numbers IRHNA593064, JANSF2N7524U2
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
38 ± 5%
61 ± 5%
84 ± 5%
Energy
(MeV)
270 ± 7.5%
330 ± 7.5%
350 ± 7.5%
Range
(µm)
35 ± 7.5%
31 ± 7.5%
28 ± 7.5%
VDS (V)
@ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =15V @ VGS =20V
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-45
–––
-60
-25
–––
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
Bias VGS (V)
15
20
Bias VDS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
2017-03-08
IRHNA597064
JANSR2N7524U2
Pre-Irradiation
1000
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
TOP
-ID, Drain-to-Source Current (A)
100
-5.0V
-ID, Drain-to-Source Current (A)
100
-5.0V
10
0.1
1
20
s PULSE WIDTH
Tj = 25°C
10
100
20
s PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
2.0
Fig 2.
Typical Output Characteristics
I
D
= -75A
I
D
= -56A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-ID, Drain-to-Source Current (
)
1.5
T J = 25°C
T J = 150°C
1.0
0.5
VDS = -25V
20
s PULSE WIDTH
100
5
5.5
6
6.5
7
7.5
8
-VGS, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= -12V
0
20 40
60
80 100 120 140 160
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
12000
VGS = 0V, f = 1 MHZ
Ciss = C + Cgd, C SHORTED
gs
ds
Fig 4.
Normalized On-Resistance Vs. Temperature
16
ID = -56A
-VGS, Gate-to-Source Voltage (V)
10000
Crss = C
gd
Coss = C + Cgd
ds
VDS= -48V
VDS= -30V
12
C, Capacitance (pF)
8000
Ciss
Coss
6000
8
4000
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100
120
140
160
2000
Crss
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2017-03-08
IRHNA597064
JANSR2N7524U2
Pre-Irradiation
1000
-ISD , Reverse Drain Current (
)
1000
T J = 150°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100s
1ms
100
-I D, Drain-to-Source Current (A)
100
10
T J = 25°C
10
10ms
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
-V DS , Drain-to-Source Voltage (V)
DC
0.1
0.5
1.5
2.5
3.5
VGS = 0V
4.5
5.5
0.1
100
-VSD , Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
100
Fig 8.
Maximum Safe Operating Area
1600
EAS , Single Pulse Avalanche Energy (mJ)
LIMITED BY PACKAGE
80
ID
1200
-I
D
, Drain Current (A)
-25A
-35.4A
BOTTOM -56A
TOP
60
800
40
20
400
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Starting T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
1
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak T J = P DM x Z thJC + Tc
1E-005
0.0001
0.001
0.01
0.1
1
0.001
t1, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-03-08
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