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IRHNA597064SCSD

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size382KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRHNA597064SCSD Overview

Power Field-Effect Transistor,

IRHNA597064SCSD Parametric

Parameter NameAttribute value
MakerInfineon
package instruction,
Reach Compliance Codecompli
PD-94604D
IRHNA597064
JANSR2N7524U2
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA597064
IRHNA593064
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.016
0.016
I
D
-56A
-56A
QPL Part Number
JANSR2N7524U2
JANSF2N7524U2
SMD-2
60V, P-CHANNEL
REF: MIL-PRF-19500/733
R5
TECHNOLOGY
Description
IR HiRel R5 technology provides high performance
power MOSFETs for space applications. These devices
have been characterized for both Total Dose and Single
Event Effect (SEE) with useful performance up to LET of
80 (MeV/(mg/cm
2
). The combination of low R
DS
(on) and
low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers.
These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= -12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
300 (for 5s)
3.3 (Typical)
-56*
-56*
-224
250
2.0
± 20
725
-56
25
-2.1
-55 to + 150
I
D
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
2017-03-08

IRHNA597064SCSD Related Products

IRHNA597064SCSD IRHNA597064D IRHNA597064SCVD
Description Power Field-Effect Transistor, Power Field-Effect Transistor, Power Field-Effect Transistor,
Maker Infineon Infineon Infineon
Reach Compliance Code compli compliant compli

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