2N7224UPBF datasheet, PDF - EEWORLD Datasheet

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2N7224UPBF: Description34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size228KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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2N7224UPBF Overview

34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

2N7224UPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compli
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	34 A
Maximum drain-source on-resistance	0.081 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	136 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	NOT SPECIFIED
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2N7224UPBF Related Products

	2N7224UPBF	2N7224U	2N7224DPBF	2N7224D
Description	34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Is it Rohs certified?	conform to	incompatible	conform to	incompatible
Reach Compliance Code	compli	compli	compli	compli
Avalanche Energy Efficiency Rating (Eas)	150 mJ	150 mJ	150 mJ	150 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (ID)	34 A	34 A	34 A	34 A
Maximum drain-source on-resistance	0.081 Ω	0.081 Ω	0.081 Ω	0.081 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	136 A	136 A	136 A	136 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	NOT SPECIFIED	Tin/Lead (Sn/Pb)	NOT SPECIFIED	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	NOT SPECIFIED	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
package instruction	FLANGE MOUNT, R-MSFM-P3	-	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Base Number Matches	1	1	1	-

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