Silicon Junction FETs (Small Signal)
2SK0374
(2SK374)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I
Features
unit: mm
0.40
+0.10
–0.05
3
0.16
+0.10
–0.06
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10°
1.1
+0.2
–0.1
Drain to Source voltage
Gate to Drain voltage
V
DSX
V
GSO
I
D
I
G
55
V
V
V
V
GDO
−55
−55
30
10
Gate to Source voltage
Drain current
Gate current
1: Source
2: Drain
3: Gate
0 to 0.1
Parameter
Symbol
Ratings
Unit
1.1
+0.3
–0.1
I
Absolute Maximum Ratings
(Ta = 25°C)
(0.65)
G
Low noise-figure (NF)
G
High gate to drain voltage V
GDO
G
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
Allowable power dissipation
Channel temperature
Storage temperature
P
D
T
ch
T
stg
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
I
DSS*
I
GSS
/D
is
V
GDC
V
GSC
g
m
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NF
M
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
S
10 to 20
2BS
Marking Symbol
Pl
e
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1
2
M
Di ain
sc te
on na
tin nc
ue e/
d
mA
mA
200
150
mW
°C
°C
−55
to +150
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol (Example): 2B
ue
Conditions
min
1
typ
max
20
−10
−5
Unit
mA
nA
V
V
nt
in
V
DS
= 10V, V
GS
= 0
co
V
GS
=
−30V,
V
DS
= 0
I
G
=
−100µA,
V
DS
= 0
−55
2.5
−80
7.5
6.5
1.9
2.5
V
DS
= 10V, I
D
= 10µA
ce
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
mS
pF
pF
nt
en
an
ai
V
DS
= 10V, V
GS
= 0, R
g
= 100kΩ
f = 100Hz
dB
Note) The part number in the parenthesis shows conventional part number.
0.4
±0.2
5°
249
Silicon Junction FETs (Small Signal)
P
D
Ta
240
5
Ta=25˚C
200
2SK0374
I
D
V
DS
10
Ta=25˚C
I
D
V
DS
Allowable power dissipation P
D
(mW)
4
8
Drain current I
D
(mA)
160
Drain current I
D
(mA)
V
GS
=0V
3
V
GS
=0
– 0.2V
6
– 0.2V
120
– 0.4V
4
– 0.6V
2
– 0.8V
–1.0V
2
– 0.4V
– 0.6V
80
40
1
– 0.8V
–1.0V
–1.2V
0
0.6
0
2
4
6
8
10
12
0
0
20
40
60
80 100 120 140 160
0
0
0.1
0.2
0.3
0.4
0.5
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Drain to source voltage V
DS
(V)
I
D
V
GS
16
V
DS
=10V
14
12
g
m
V
GS
12
V
DS
=10V
Ta=25˚C
g
m
I
D
V
DS
=10V
Ta=25˚C
Mutual conductance g
m
(mS)
10
Mutual conductance g
m
(mS)
10
Drain current I
D
(mA)
12
10
8
6
4
75˚C
2
0
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
8
8
I
DSS
=7.5mA
Ta=–25˚C
25˚C
6
6
4
4
2
2
0
–2.0
0
–1.6
–1.2
– 0.8
– 0.4
0
0
2
4
6
8
10
Gate to source voltage V
GS
(V)
Gate to source voltage V
GS
(V)
Drain current I
D
(mA)
C
i s s
V
DS
V
GS
=0
Ta=25˚C
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
C
oss
V
DS
Output capacitance (Common source) C
oss
(pF)
8
V
GS
=0
Ta=25˚C
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Input capacitance (Common source) C
iss
(pF)
16
Drain to source voltage V
DS
(V)
Drain to source voltage V
DS
(V)
250
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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Analogue and Mixed Signal
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