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PMPB15XP_15

Description
12 V, single P-channel Trench MOSFET
File Size250KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PMPB15XP_15 Overview

12 V, single P-channel Trench MOSFET

PMPB15XP
22 November 2012
12 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
1.5 kV ESD protection (human body model)
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s
V
GS
= -4.5 V; I
D
= -8.2 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-12
-
Typ
-
-
-
Max
-12
12
-11.8
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
15
19
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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