PreliminaryTechnical Information
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA180N10T7
V
DSS
I
D25
R
DS(on)
= 100
V
= 180
A
Ω
≤
6.4 mΩ
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Transient
T
C
= 25° C
Package Current Limit, RMS
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
175° C, R
G
=3.3
Ω
T
C
= 25° C
Maximum Ratings
100
100
±
30
180
120
450
25
750
3
480
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
g
TO-263 (7-lead) (IXTA..7)
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
3
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175
°
C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 25 A, Note 1
T
J
= 150° C
Characteristic Values
Min. Typ.
Max.
100
2.5
4.5
±
200
5
250
5.4
6.4
V
V
nA
µA
µA
m
Ω
© 2006 IXYS CORPORATION All rights reserved
DS99711 (11/06)
IXTA180N10T7
Symbol
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
Source-Drain Diode
Symbol
Test Conditions
T
J
= 25° C unless otherwise specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0 V
Pulse width limited by T
JM
I
F
= 25 A, V
GS
= 0 V, Note 1
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 50 V, V
GS
= 0 V
100
Characteristic Values
Min. Typ.
Max.
180
450
0.95
A
A
V
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A
Resistive Switching Times
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A
R
G
= 3.3
Ω
(External)
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
Test Conditions
V
DS
= 10 V; I
D
= 60 A, Note 1
Characteristic Values
Min.
70
Typ.
110
6900
923
162
33
54
42
31
151
39
45
Max.
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31
°C/W
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA...7) Outline
(T
J
= 25° C unless otherwise specified)
Notes: 1.
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTA180N10T7
Fig. 1. Output Characteristics
@ 25ºC
180
160
140
V
GS
= 10V
9V
8V
300
275
250
225
V
GS
= 10V
9V
8V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
I
D
- Amperes
120
100
80
60
6V
40
20
0
0
0.2
0.4
0.6
0.8
1
1.2
7V
200
175
150
125
100
75
50
25
0
0
1
2
3
4
5
6
7
6V
7V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
180
160
140
V
GS
= 10V
9V
8V
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value
vs. Junction Temperature
V
GS
= 10V
I
D
- Amperes
120
7V
100
80
60
40
20
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
5V
6V
R
DS(on)
- Normalized
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
I
D
= 180A
I
D
= 90A
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value
vs. Drain Current
3
2.8
2.6
T
J
= 175ºC
120
100
140
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit for TO-263 (7-Lead)
R
DS(on)
- Normalized
2.4
I
D
- Amperes
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0
50
100
150
200
250
300
T
J
= 25ºC
V
GS
= 10V
15V
- - - -
80
60
40
20
0
-50
External Lead Current Limit for TO-3P, TO-220, & TO-263
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTA180N10T7
Fig. 7. Input Admittance
225
200
175
150
135
120
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
150
125
100
75
50
25
0
3.5
4
4.5
5
5.5
6
6.5
7
7.5
T
J
= 150ºC
25ºC
- 40ºC
105
90
75
60
45
30
15
0
0
25
50
75
100
125
25ºC
150ºC
150
175
200
225
250
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
275
250
225
200
10
9
8
7
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 150ºC
T
J
= 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
175
150
125
100
75
50
25
0
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
Ciss
1.00
Fig. 12. Maximum Transient Thermal
Impedance
Capacitance - PicoFarads
f = 1 MHz
1,000
C oss
Z
(th)JC
- ºC / W
30
35
40
0.10
C rss
100
0
5
10
15
20
25
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Second
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T7
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
70
65
60
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 50V
70
65
60
55
T
J
= 25ºC
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
55
50
45
40
35
30
25
20
15
10
25
35
45
55
65
75
85
95
I
D
= 25A
I
D
= 50A
t
r
- Nanoseconds
50
45
40
35
30
25
20
15
10
T
J
= 125ºC
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 50V
105
115
125
24
26
28
30
32
34
36
38
40
42
44
46
48
50
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
180
160
140
75
38
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
64
t
r
V
DS
= 50V
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
I
D
= 50A
70
65
t
f
37
36
t
d(off)
- - - -
25A < I
D
< 50A
61
58
55
52
49
46
43
40
125
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 50V
t
d ( o f f )
- Nanoseconds
t
d ( o n )
- Nanoseconds
t
r
- Nanoseconds
120
100
80
60
40
20
0
4
6
8
10
12
14
16
18
20
I
D
= 25A
60
55
50
45
40
35
30
t
f
- Nanoseconds
35
34
33
32
31
30
25
35
45
55
65
75
85
95
105
115
I
D
= 25A, 50A
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
37
36
T
J
= 125ºC
64
61
58
55
52
49
46
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
160
250
t
f
140
V
DS
= 50V
t
d(off)
- - - -
220
T
J
= 125ºC, V
GS
= 10V
t
d ( o f f )
- Nanoseconds
t
d ( o f f )
- Nanoseconds
t
f
- Nanoseconds
35
34
33
32
31
30
25
t
f
V
DS
= 50V
t
d(off)
- - - -
t
f
- Nanoseconds
120
100
25A < I
D
< 50A
80
60
40
20
2
4
6
8
10
12
14
16
18
20
I
D
= 25A, 50A
190
160
130
100
70
40
R
G
= 3.3
Ω
, V
GS
= 10V
T
J
= 25ºC
43
40
30
35
40
45
50
I
D
- Amperes
R
G
- Ohms
© 2006 IXYS CORPORATION All rights reserved
IXYS REF: T_180N10T (61) 11-20-06-A.xls
京公网安备 11010802033920号
EEWORLD
