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IPB70N04S307ATMA1

Description
Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size186KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPB70N04S307ATMA1 Overview

Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

IPB70N04S307ATMA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Objectid1384791127
package instructionGREEN, PLASTIC PACKAGE-3
Reach Compliance Codecompliant
ECCN codeEAR99
compound_id160211979
Other featuresULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)145 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)82 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)280 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
IPB70N04S3-07
IPI70N04S3-07, IPP70N04S3-07
OptiMOS
®
-T
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
40
6.2
80
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB70N04S3-07
IPI70N04S3-07
IPP70N04S3-07
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N0407
3N0407
3N0407
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=50 A
Value
Unit
A
80
58
280
145
±20
79
-55 ... +175
55/175/56
mJ
V
W
°C
Rev. 1.0
page 1
2007-05-03

IPB70N04S307ATMA1 Related Products

IPB70N04S307ATMA1 IPI70N04S307AKSA1 IPP70N04S307AKSA1
Description Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 MOSFET N-CHANNEL_30/40V MOSFET N-CH 40V 80A TO220-3
Is it Rohs certified? conform to conform to -
Maker Infineon Infineon -
package instruction GREEN, PLASTIC PACKAGE-3 IN-LINE, R-PSIP-T3 -
Reach Compliance Code compliant compliant -
ECCN code EAR99 EAR99 -
Other features ULTRA LOW RESISTANCE ULTRA LOW RESISTANCE -
Avalanche Energy Efficiency Rating (Eas) 145 mJ 145 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 40 V 40 V -
Maximum drain current (ID) 82 A 70 A -
Maximum drain-source on-resistance 0.006 Ω 0.0071 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-252 TO-262AA -
JESD-30 code R-PSSO-G2 R-PSIP-T3 -
Number of components 1 1 -
Number of terminals 2 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE IN-LINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum pulsed drain current (IDM) 280 A 280 A -
surface mount YES NO -
Terminal form GULL WING THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
Transistor component materials SILICON SILICON -
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