PROCESS
TRIAC
CPQ057
2 Amp, 600 Volt TRIAC Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
MT1 Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
3,374
PRINCIPAL DEVICE TYPES
CQ92-2M
CQ223-2M
CQ89-2M
GLASS PASSIVATED MESA
57 x 57 MILS
9.1 MILS
29 x 17 MILS
8 x 8 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
BACKSIDE MT2
R1 (29-April 2010)
w w w. c e n t r a l s e m i . c o m