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UF5402

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size59KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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UF5402 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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UF5400
THRU
UF5408
3 Amp Ultra Fast
Recovery Rectifier
50 to 1000 Volts
DO-201AD
High Surge Capability
Low Leakage
Low Forward Voltage Drop
Ultra Fast Switching Speed For High Efficiency
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Typical Thermal Resistance 20°C/W
MCC
Device
Maximum
Maximum
Catalog
Marking
Recurrent
RMS
Number
Peak Reverse
Voltage
Voltage
UF5400
---
50V
35V
UF5401
---
100V
70V
UF5402
---
200V
140V
UF5404
---
400V
280V
UF5406
---
600V
420V
UF5407
---
800V
560V
UF5408
---
1000V
700V
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
UF5400-5402
UF5404
UF5406-UF5408
I
F(AV)
I
FSM
3A
150A
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
400V
800V
1000V
D
A
Cathode
Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
T
A
= 55°C
8.3ms, half sine
D
C
V
F
Reverse Current At
I
R
T
A
= 25°C
Rated DC Blocking
T
A
= 100°C
Voltage (
Maximum DC
)
Maximum Reverse
Recovery Time
50ns
I
F
=0.5A, I
R
=1.0A,
UF5400-5404
T
rr
75ns
I
rr
=0.25A
UF5406-5408
Typical Junction
Capacitance
75pF
Measured at
UF5400-5404
C
J
50pF
1.0MHz, V
R
=4.0V
UF5406-5408
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
1.0V
1.3V
1.7V
10µA
50µA
I
FM
= 3.0A;
T
A
= 25°C
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
MIN
---
---
1.20
25.40
DIM
A
B
C
D
MAX
.370
.250
.052
---
MAX
9.50
6.40
1.30
---
NOTE
www.mccsemi.com

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UF5402 UF5407 UF5408 UF5406 UF5404 UF5401 UF5400
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