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MGA-43128-BLKG

Description
700 MHz - 800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size476KB,24 Pages
ManufacturerAVAGO
Websitehttp://www.avagotech.com/
Environmental Compliance
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MGA-43128-BLKG Overview

700 MHz - 800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

MGA-43128-BLKG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAVAGO
package instructionLCC28,.2SQ,20
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresCMOS COMPATIBLE
Characteristic impedance50 Ω
structureCOMPONENT
Gain31.5 dB
Maximum input power (CW)20 dBm
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals28
Maximum operating frequency800 MHz
Minimum operating frequency700 MHz
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeLCC28,.2SQ,20
power supply5 V
RF/Microwave Device TypesNARROW BAND HIGH POWER
surface mountYES
technologyGAAS
Terminal surfaceTin (Sn)
Maximum voltage standing wave ratio6
MGA-43128
High Linearity (700-800) MHz Wireless Data Power Amplifier
Data Sheet
Description
Avago Technologies’ MGA-43128 is a high-linearity
power amplifier for use in the (700-800) MHz band.
High linear output power at 5V is achieved using Avago
Technologies’ proprietary 0.25
m
GaAs Enhancement-
mode pHEMT process. It is housed in a miniature 5.0 x 5.0
x 0.85 mm
3
28-lead QFN package. It includes a shutdown
and single-bit gain switch function. A detector is also
included on-chip. The compact footprint coupled with
high gain and high efficiency makes the MGA-43128 an
ideal choice for UMTS 3GPP LTE driver and final stage
amplifier applications.
Features

High gain: 33.4 dB

High Power linear output: 29.1 dBm at 5 V supply (2.5%
EVM, LTE 3GPP.TS 36.104, 10 MHz bandwidth OFDMA)

Built-in detector and shutdown switches

Switchable gain: 18 dB attenuation using one single
CMOS compatible switch pin

3GPP spectral mask compliant at 29 dBm output power

GaAs E-pHEMT Technology
[1]

Low cost small package size: 5.0 x 5.0 x 0.85 mm
3

MSL-2a, lead-free and halogen free

Useable at 3.3 V supply for lower supply voltage
applications (27 dBm at 2.5% EVM, LTE 3GPP.TS 36.101,
10MHz bandwidth SC-FDMA)
Component Image
5.0 x 5.0 x 0.85 mm
3
28-lead QFN Package (Top View)
M1
NC
Vdd1
NC
NC
NC
NC
Specifications
NC
Vdd2/RFout
Vdd2/RFout
Vdd2/RFout
Vdd2/RFout
Vdd2/RFout
NC
43128
YYWW
XXXX
NC
NC
NC
RFin
NC
NC
Vbyp
Gnd
Notes:
Package marking provides orientation and identification
“43128” = Device Part Number
“YYWW” = Year and Work Week
“XXXX” = Assembly Lot Number
750 MHz; Vdd = Vbias = 5.0 V, Vc1 = 2.8 V, Vc2 = 2.4 V, Iqtotal
= 370 mA (typ), LTE 3GPP.TS 36.104, 10 MHz bandwidth
OFDMA

33.4 dB Gain

29.1 dBm Linear Pout (2.5% EVM)

36 dBm OP1dB

22% PAE @ Linear Pout

3.3 V Vdet @ Linear Pout

18 dB Switchable Gain Attenuation (Low Gain Mode)

40
A
Shutdown Current (Vc = Vbias = 0 V)
NC
Vc1
Vc2
NC
Vbias
NC
Vdet
Applications

High linearity amplifier for (700-800) MHz LTE AP, CPE,
and Picocell

Base Station Driver Amplifier
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Functional Block Diagram
M1
Vdd1
RFin
Match
Vdd2/RFout
Vdet
Bias
MMIC
Vbyp
Vc1
Vc2
Bias
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 500 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.

MGA-43128-BLKG Related Products

MGA-43128-BLKG MGA-43128
Description 700 MHz - 800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 700 MHz - 800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
structure COMPONENT COMPONENT
Maximum operating frequency 800 MHz 800 MHz
Minimum operating frequency 700 MHz 700 MHz
Maximum voltage standing wave ratio 6 6
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