MGA-43128
High Linearity (700-800) MHz Wireless Data Power Amplifier
Data Sheet
Description
Avago Technologies’ MGA-43128 is a high-linearity
power amplifier for use in the (700-800) MHz band.
High linear output power at 5V is achieved using Avago
Technologies’ proprietary 0.25
m
GaAs Enhancement-
mode pHEMT process. It is housed in a miniature 5.0 x 5.0
x 0.85 mm
3
28-lead QFN package. It includes a shutdown
and single-bit gain switch function. A detector is also
included on-chip. The compact footprint coupled with
high gain and high efficiency makes the MGA-43128 an
ideal choice for UMTS 3GPP LTE driver and final stage
amplifier applications.
Features
High gain: 33.4 dB
High Power linear output: 29.1 dBm at 5 V supply (2.5%
EVM, LTE 3GPP.TS 36.104, 10 MHz bandwidth OFDMA)
Built-in detector and shutdown switches
Switchable gain: 18 dB attenuation using one single
CMOS compatible switch pin
3GPP spectral mask compliant at 29 dBm output power
GaAs E-pHEMT Technology
[1]
Low cost small package size: 5.0 x 5.0 x 0.85 mm
3
MSL-2a, lead-free and halogen free
Useable at 3.3 V supply for lower supply voltage
applications (27 dBm at 2.5% EVM, LTE 3GPP.TS 36.101,
10MHz bandwidth SC-FDMA)
Component Image
5.0 x 5.0 x 0.85 mm
3
28-lead QFN Package (Top View)
M1
NC
Vdd1
NC
NC
NC
NC
Specifications
NC
Vdd2/RFout
Vdd2/RFout
Vdd2/RFout
Vdd2/RFout
Vdd2/RFout
NC
43128
YYWW
XXXX
NC
NC
NC
RFin
NC
NC
Vbyp
Gnd
Notes:
Package marking provides orientation and identification
“43128” = Device Part Number
“YYWW” = Year and Work Week
“XXXX” = Assembly Lot Number
750 MHz; Vdd = Vbias = 5.0 V, Vc1 = 2.8 V, Vc2 = 2.4 V, Iqtotal
= 370 mA (typ), LTE 3GPP.TS 36.104, 10 MHz bandwidth
OFDMA
33.4 dB Gain
29.1 dBm Linear Pout (2.5% EVM)
36 dBm OP1dB
22% PAE @ Linear Pout
3.3 V Vdet @ Linear Pout
18 dB Switchable Gain Attenuation (Low Gain Mode)
40
A
Shutdown Current (Vc = Vbias = 0 V)
NC
Vc1
Vc2
NC
Vbias
NC
Vdet
Applications
High linearity amplifier for (700-800) MHz LTE AP, CPE,
and Picocell
Base Station Driver Amplifier
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Functional Block Diagram
M1
Vdd1
RFin
Match
Vdd2/RFout
Vdet
Bias
MMIC
Vbyp
Vc1
Vc2
Bias
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 500 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
MGA-43128 Absolute Maximum Rating
[1]
T
A
= 25° C
Symbol
Vdd, Vbias
Vc
P
in,max
P
diss
T
j
T
STG
Thermal Resistance
Units
V
V
dBm
W
°C
°C
Parameter
Supply Voltages, Bias Supply Voltage
Control Voltage
CW RF Input Power
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Absolute Maximum
6.0
(Vdd)
20
7.0
150
-65 to 150
Thermal Resistance
[2]
jc
= 13.5°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-
Red Measurement Technique.
3. Board temperature (T
c
) is 25° C. For T
c
>55.5° C, derate the device power at 74.1 mW
per °C rise in board temperature adjacent to
package bottom.
Electrical Specifications
T
A
= 25° C, Vdd = Vbias = 5.0 V, Vc1 = 2.8 V, Vc2 = 2.4 V, Vbyp = 0 V, Iqtotal = 370 mA, RF performance at 750 MHz, LTE 3GPP.
TS 36.104, 10 MHz bandwidth OFDMA operation unless otherwise stated.
Symbol
Vdd
Iqtotal
Gain
OP1dB
Pout_linear
Itotal_linear
S11
S22
S12
2 Fc
Atten
Vdet
DetR
S
Parameter and Test Condition
Supply Voltage
Quiescent Supply Current (normal high gain mode)
Quiescent Supply Current (low gain mode, Vbyp = 5.0 V)
Gain
Output Power at 1 dB Gain Compression
Linear Output power with 3GPP LTE v8.6.0 (March 2009),
10 MHz bandwidth OFDMA @ 2.5% EVM
Total current draw at Pout_linear level
Input Return Loss, 50
source
Output Return Loss, 50
load
Reverse Isolation
Second harmonic attenuation @ Pin = -20 dBm
Gain attenuation in low gain mode (Vbyp = 5.0 V)
Detector output DC voltage @ 29 dBm linear Pout
Detector RF dynamic range
Stability under load VSWR of 6:1 (all phase angle),
spurious output
Units
mA
mA
dB
dBm
dBm
mA
dB
dB
dB
dBc
dB
V
dB
dBc
Min.
Typ.
5.0
370
370
Max.
31.5
27.6
33.4
36
29.1
780
-20
-7
50
60
1000
14.5
18
3.3
17
21.5
-60
2
Product Consistency Distribution Charts
[1]
LSL
LSL
27
28
29
30
31
31
32
33
34
35
36
Figure 1. Pout_linear; LSL = 27.6 dBm, Nominal = 29.1 dBm
Figure 2. Gain; LSL = 31.5 dB, Nominal = 33.4 dB
USL
LSL
USL
600
700
800
900
1000
14
15
16
17
18
19
20
21
22
Figure 3. Itotal_linear; Nominal = 780 mA, USL = 1000 mA
Figure 4. Atten; LSL = 14.5 dB, Nominal = 18 dB, USL = 21.5 dB; Vbyp = 5 V
Note:
1. Distribution data sample size is 3500 samples taken from 3 different wafer lots. T
A
= 25° C, Vdd = Vbias = 5.0 V, Vc1 = 2.8 V, Vc2 = 2.4 V, Vbyp = 0 V,
RF performance at 750 MHz unless otherwise stated. Future wafers allocated to this product may have nominal values anywhere between the
upper and lower limits.
3
MGA-43128 Typical Performance
T
A
= 25° C, Vdd = Vbias = 5.0 V, Vc1 = 2.8 V, Vc2 = 2.4 V, Vbyp = 0 V, Iqtotal = 370 mA, RF performance at 750 MHz, LTE 3GPP.
TS 36.104, 10 MHz bandwidth OFDMA operation unless otherwise stated.
40
S21
30
S21, S11, S22 (dB)
25° C
-40° C
85° C
S22
S11
S21, S11, S22 (dB)
20
10
0
-10
-20
-30
600
650
700
750 800 850
Frequency (MHz)
900
950
1000
20
15
10
5
0
-5
-10
-15
-20
-25
-30
600
S21
S22
S11
25° C
-40° C
85° C
650
700
750 800 850
Frequency (MHz)
900
950
1000
Figure 5. Small-signal performance in high gain mode, Vbyp = 0 V
Figure 6. Small-signal performance in low gain mode, Vbyp = 5.0 V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1.0
25° C
-40° C
85° C
Itotal (A)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
12
14
16
18
20 22 24
Pout (dBm)
26
28
30
10
12
14
16
18
20 22 24
Pout (dBm)
26
28
30
25° C
-40° C
85° C
Figure 7. Over-temperature EVM vs Output Power at 728 MHz
EVM (%)
Figure 8. Over-temperature Idd_total vs Output Power at 728 MHz
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
35
25° C
-40° C
85° C
Gain (dB)
34
33
32
31
30
29
12
14
16
18
20 22 24
Pout (dBm)
26
28
30
6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout (dBm)
Figure 10. Over-temperature CW Gain vs Output Power at 728 MHz
25° C
-40° C
85° C
Figure 9. Over-temperature Vdet vs Output Power at 728 MHz
4
Vdet (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
12
1.0
25° C
-40° C
85° C
Itotal (A)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
14
16
18
20 22 24
Pout (dBm)
26
28
30
10
12
14
16
18
20 22 24
Pout (dBm)
26
28
30
25° C
-40° C
85° C
Figure 11. Over-temperature EVM vs Output Power at 750 MHz
EVM (%)
Figure 12. Over-temperature Idd_total vs Output Power at 750 MHz
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
12
35
25° C
-40° C
85° C
Gain (dB)
34
33
32
31
30
29
14
16
18
20 22 24
Pout (dBm)
26
28
30
6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout (dBm)
Figure 14. Over-temperature CW Gain vs Output Power at 750 MHz
25° C
-40° C
85° C
Figure 13. Over-temperature Vdet vs Output Power at 750 MHz
Vdet (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
25° C
-40° C
85° C
Itotal (A)
0.9
0.8
0.7
0.6
0.5
0.4
10
12
14
16
18
20 22 24
Pout (dBm)
26
28
30
0.3
10
12
14
16
18
20 22 24
Pout (dBm)
26
28
30
25° C
-40° C
85° C
Figure 15. Over-temperature EVM vs Output Power at 756 MHz
EVM (%)
Figure 16. Over-temperature Idd_total vs Output Power at 756 MHz
5
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