2SC2881
NPN EPITAXIAL PLANAR TRANSISTOR
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Features:
* Small Flat Package
* High Transition Frequency
* High Voltage
SOT-89
Applications:
* Power Ampli er and Voltage Ampli er
ABSOLUTE MAXIMUM RATINGS(T
A
=25ºC Unless Otherwise Noted)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current (DC)
Total Device Disspation T
A
=25°C
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
Tj
Tstg
Value
120
120
5
800
500
250
+150
-55 to +150
Unit
V
V
V
mA
mW
°C/W
˚C
˚C
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2SC2881
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I
C
=50mA, I
E
=0
Collector-Emitter Breakdown Voltage
I
C
=10mA, I
B
=0
Emitter-Base Breakdown Voltage
I
E
=1mA, I
C
=0
Collector Cut-O Current
V
CB
=120V, I
E
=0
Emitter-Cut-O Current
V
EB
=5V, I
C
=0
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
120
120
5.0
-
-
Typ
-
-
-
-
-
Max
-
-
-
0.1
0.1
Unit
V
V
V
µA
µA
ON CHARACTERISTICS
*
DC Current Gain
V
CE
=5V, I
C
=100mA
Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA
Base-Emitter Voltage
V
CE
=5V, I
C
=500mA
h
FE
V
CE(sat)
V
BE
80
-
-
-
-
-
240
1
1
-
V
V
DYNAMIC CHARACTERISTICS
Transition Frequency
V
CE
=5V, I
C
=100mA
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
f
T
C
ob
-
-
120
-
-
30
MHz
pF
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
80-160
CO1
Y
120-240
CY1
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