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2SC2881O

Description
Small Signal Bipolar Transistor, 0.8A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size228KB,3 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
Environmental Compliance
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2SC2881O Overview

Small Signal Bipolar Transistor, 0.8A I(C), NPN

2SC2881O Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknow
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
2SC2881
NPN EPITAXIAL PLANAR TRANSISTOR
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Features:
* Small Flat Package
* High Transition Frequency
* High Voltage
SOT-89
Applications:
* Power Ampli er and Voltage Ampli er
ABSOLUTE MAXIMUM RATINGS(T
A
=25ºC Unless Otherwise Noted)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current (DC)
Total Device Disspation T
A
=25°C
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
Tj
Tstg
Value
120
120
5
800
500
250
+150
-55 to +150
Unit
V
V
V
mA
mW
°C/W
˚C
˚C
WEITRON
http://www.weitron.com.tw
1/3
25-Mar-2013

2SC2881O Related Products

2SC2881O 2SC2881Y 2SC2881
Description Small Signal Bipolar Transistor, 0.8A I(C), NPN Small Signal Bipolar Transistor, 0.8A I(C), NPN Small Signal Bipolar Transistor
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknow unknow unknown
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 120 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 80 120 80
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz
Base Number Matches 1 1 1
Is it Rohs certified? conform to conform to -
Maximum power dissipation(Abs) 0.5 W 0.5 W -
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