2729-120 datasheet, PDF - EEWORLD Datasheet

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2729-120: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size478KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2729-120 Overview

Transistor

2729-120 Parametric

Parameter Name	Attribute value
Objectid	106562922
package instruction	,
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	0

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2729 – 120

120 Watts - 36 Volts, 100µs, 10%

Radar 2700-2900 MHz

PRELIMINARY

GENERAL DESCRIPTION

The 2729-120 is an internally matched, COMMON BASE transistor

capable of providing 120 Watts of pulsed RF output power at one

hundred microseconds pulse width, ten percent duty factor across the

band 2700 to 2900 MHz. This hermetically solder-sealed transistor is

specifically designed for S-Band radar applications. It utilizes gold

metalization and emitter ballasting to provide high reliability and

supreme ruggedness.

CASE OUTLINE

55KS, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

389 Watts Pk

65 Volts

3.0 Volts

15 Amps

See Attached Drawing

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

BVebo

Emitter to Base Voltage

Collector Current , Peak

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200

+ 200

ELECTRICAL CHARACTERISTICS @ 25

SYMBOL

Pout

VSWR

CHARACTERISTICS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

TEST CONDITIONS

F = 2700-2900 MHz

Vcc = 36 Volts

Pulse Width = 100

µs

Duty = 10 %

MIN

120

8.24

8.8

TYP

MAX

2:1

UNITS

Watts

F = 2900MHz, Po =120W

BVces

BVebo

Hfe

Collector to Emitter Breakdown

Emitter to Base Breakdown

DC Current Gain

Thermal Resistance

Ic = 50 mA

Ie = 25 mA

Vce = 5 V, Ic = 500 mA

Rated Pulse Condition

3.0

Volts

0.45

C/W

Note 1: Pulse condition of 100µsec, 10%.

Issue October 2001

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