DATA SHEET
NPN SILICON RF TRANSISTOR
2SC4093
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN MINIMOLD
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which
enables high-isolation gain.
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
• High Power gain
S
21e
2
= 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
• 4-pin minimold Package
ORDERING INFORMATION
Part Number
2SC4093
2SC4093-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3.0
100
200
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10519EJ01V0DS (1st edition)
(Previous No. P10365EJ3V1DS00)
Date Published October 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices, Ltd. 1991, 2004
2SC4093
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 10 V, I
C
= 20 mA
−
−
50
−
−
120
1.0
1.0
250
µ
A
µ
A
−
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
V
CB
= 10 V, I
E
= 0 mA, f = 1.0 MHz
−
11
−
−
7.0
13
1.1
0.6
–
−
2.0
0.95
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
Range
R26/RBF
R26
50 to 100
Note
R27/RBG
R27
Note
R28/RBH
R28
Note
80 to 160
125 to 250
Note
Old Specification / New Specification
2
Data Sheet PU10519EJ01V0DS
2SC4093
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
Total Power Dissipation P
tot
(mW)
Free Air
200
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
f = 1.0 GHz
1
0.5
100
0.2
0
50
100
150
0.1
1
2
5
10
20
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
20
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
V
CE
= 10 V
10
5
V
CE
= 10 V
100
DC Current Gain h
FE
50
2
1
0.6
1
2
5
10
20
40
20
10
0.5
1
5
10
50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
MAXIMUM GAIN/INSERTION
POWER GAIN vs. FREQUENCY
30
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
20
Maximum Gain G
max
(dB)
Insertion Power Gain |S
21e
|
2
(dB)
G
max
20
|S
21e
|
2
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 10 V
I
C
= 20 mA
V
CE
= 10 V
f = 1.0 GHz
10
10
0
0.1
0.2
0.5
Frequency f (GHz)
1.0
2.0
0
0.5
1
2
5
10
20
50
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10519EJ01V0DS
3
2SC4093
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
V
CE
= 10 V
f = 1.0 GHz
Noise Figure NF (dB)
5
4
3
2
1
0
0.5
1
5
10
20
50 70
Collector Current I
C
(mA)
Remark
The graph indicates nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.ncsd.necel.com/
4
Data Sheet PU10519EJ01V0DS
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