MCC
Micro Commercial Components
TM
omponents
20736 Marilla
Street Chatsworth
!"#
$
% !"#
2N4400
Features
•
•
•
•
•
Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS
Compliant. See ordering information)
This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Rating
Total Device Dissipation
Derate above 25
O
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rating
40
60
6.0
600
-55 to +150
-55 to +150
Max
625
5.0
83.3
200
Unit
V
V
V
mA
O
C
O
C
Unit
mW
mW/
O
C
O
C/W
O
C/W
NPN General
Purpose Amplifier
Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Symbol
P
D
R
J C
R
JA
A
TO-92
E
B
Thermal Characteristics
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
40
---
Vdc
(I
C
=1.0mAdc, I
B
=0)
V
(BR)CBO
Collector-Base Breakdown Voltage
60
---
Vdc
(I
C
=100ì Adc, I
E
=0)
V
(BR)EBO
Emitter-Base Breakdown Voltage
6.0
---
Vdc
(I
E
=100ì Adc, I
C
=0)
I
CEX
Collector Cutoff Current
---
0.1
uAdc
(V
CE
=35Vdc, V
EB
=0.4Vdc)
I
BL
Base Cutoff Current
---
0.1
uAdc
(V
CE
=35Vdc, V
EB
=0.4Vdc)
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
V
(BR)CEO
D
E
E
B
C
B
C
G
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision:
D
1 of 6
2013/01/01
2N4400
MCC
Micro Commercial Components
TM
Symbol
Parameter
DC Current Gain
(V
CE
=1.0Vdc, I
C
=1.0mAdc)
(V
CE
=1.0Vdc, I
C
=10mAdc)
(V
CE
=1.0Vdc, I
C
=150mAdc)
(V
CE
=2.0Vdc, I
C
=500mAdc)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
Output Capacitance
(V
CB
=5.0Vdc, f=140KHz)
Input Capacitance
(V
EB
=0.5Vdc, f=140KHz)
Small-Signal Current Gain
(I
C
=20mAdc, V
CE
=10Vdc, f=100MHz)
Small-Signal Current Gain
(I
C
=1.0mAdc, V
CE
=10Vdc, f=1.0KHz)
Small-Signal Current Gain
(I
C
=1.0mAdc, V
CE
=10Vdc, f=1.0KHz)
Small-Signal Current Gain
(I
C
=1.0mAdc, V
CE
=10Vdc, f=1.0KHz)
Small-Signal Current Gain
(I
C
=1.0mAdc, V
CE
=10Vdc, f=1.0KHz)
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
=30Vdc, I
C
=150mAdc,
I
B1
=15mAdc, V
BE(off)
=2.0Vdc
V
CC
=30Vdc, I
C
=150mAdc,
I
B1
=I
B2
=15mAdc
Min
Max
Units
ON CHARACTERISTICS
h
FE
40
40
50
20
---
---
0.75
---
150
V
CE(sat)
0.40
0.75
0.95
1.20
Vdc
Vdc
Vdc
Vdc
V
BE(sat)
SMALL-SIGNAL CHARACTERISTICS
C
OB
C
IB
h
fe
h
fe
h
ie
h
re
h
oe
---
---
2.0
150
0.5
0.10
1.0
---
---
---
---
6.5
30
---
200
7.5
8.0
30
15
20
225
30
pF
pF
---
---
KOHM
X 10
-4
umhos
ns
ns
ns
ns
SWITCHING CHARACTERISTICS
T
d
t
r
t
s
t
f
* Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
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Revision:
D
2 of 6
2013/01/01
2N4400
MCC
TM
Micro Commercial Components
500
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
400
300
200
25 °C
125 °C
0.2
25 °C
125 °C
100
- 40 °C
0.1
- 40 °C
0
0.1
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
V
BE(ON)
- BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
25 °C
125 °C
0.6
125 °C
0.6
0.4
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
100
10
1
0.1
V
CB
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C
te
= 40V
f = 1 MHz
8
C ob
4
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
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Revision:
D
3 of 6
2013/01/01
2N4400
MCC
TM
Micro Commercial Components
Turn On and Turn Off Times
vs Collector Current
400
I
B1
= I
B2
=
I
c
10
Switching Times
vs Collector Current
400
I
B1
= I
B2
=
320
V cc = 25 V
I
c
10
320
V cc = 25 V
TIME (nS)
240
160
t off
TIME (nS)
240
160
80
0
10
tf
td
ts
tr
80
t on
0
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
100
I
C
- COLLECTOR CURRENT (mA)
1000
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
0.75
SOT-223
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
www.mccsemi.com
Revision:
D
4 of 6
2013/01/01
2N4400
MCC
Micro Commercial Components
TM
CHAR. RELATIVE TO VALUES AT I
C
= 10mA
CHAR. RELATIVE TO VALUES AT T
A
= 25
o
C
Common Emitter Characteristics
8
V
CE
= 10 V
T
A
= 25
o
C
Common Emitter Characteristics
2.4
2
1.6
1.2
0.8
0.4
0
V
CE
= 10 V
I
C
= 10 mA
h
re
h
ie
h
fe
h
oe
6
h
oe
4
h
re
2
h
fe
h
ie
0
0
10
20
30
40
50
I
C
- COLLECTOR CURRENT (mA)
60
0
20
40
60
80
T
A
- AMBIENT TEMPERATURE (
o
C)
100
CHAR. RELATIVE TO VALUES AT V
CE
= 10V
Common Emitter Characteristics
1.3
1.25
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0
5
h
oe
10
15
20
25
30
V
CE
- COLLECTOR VOLTAGE (V)
35
h
re
h
ie
I C = 10 mA
T
A
= 25
o
C
h
fe
www.mccsemi.com
Revision:
D
5 of 6
2013/01/01
Embedded System
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