2N1840 datasheet, PDF - EEWORLD Datasheet

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2N1840: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-39; CategoryDiscrete semiconductor The transistor; File Size101KB，1 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]

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2N1840 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-39

2N1840 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	27 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	90 MHz
VCEsat-Max	1.4 V
Base Number Matches	1

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Description	Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,	Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli	compli	compli
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	40	40	40	15	60	40	75	35	110
JEDEC-95 code	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	150 °C	200 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	90 MHz	50 MHz	140 MHz	90 MHz	40 MHz	40 MHz	50 MHz	60 MHz	50 MHz	50 MHz
VCEsat-Max	1.4 V	1.5 V	0.8 V	1.4 V	1.2 V	1.5 V	5 V	1.2 V	1.2 V	2 V
Base Number Matches	1	1	1	1	1	1	1	1	1	1
Collector-based maximum capacity	27 pF	-	18 pF	27 pF	15 pF	35 pF	15 pF	15 pF	15 pF	25 pF
Collector-emitter maximum voltage	15 V	-	30 V	20 V	80 V	25 V	80 V	80 V	80 V	30 V
Maximum power dissipation(Abs)	0.6 W	-	0.6 W	0.6 W	0.8 W	0.6 W	0.8 W	0.8 W	0.8 W	0.6 W

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