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2SB1356T114/F

Description
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size110KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

2SB1356T114/F Overview

Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SB1356T114/F Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)7 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)12 MHz
VCEsat-Max1 V
Base Number Matches1
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