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2SA733-R-B

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size68KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

2SA733-R-B Overview

Transistor

2SA733-R-B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
JESD-609 codee0
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SA733
2SA733-R
2SA733-Q
2SA733-P
2SA733-K
PNP Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Features
Capable of 0.25Watts of Power Dissipation.
Collector-current 0.1A
Collector-base Voltage 60V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=5.0uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=50uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0mAdc, V
CE
=6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Transistor Frequency
(I
C
=10mAdc, V
CE
=6.0Vdc
f=30MHz)
Min
50
60
5.0
---
---
Typ
---
---
---
---
---
Max
---
---
---
0.1
0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
C
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
B
ON CHARACTERISTICS
h
FE
V
CE(sat)
90
---
200
0.18
600
0.3
---
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
f
T
100
180
---
MHz
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
E
C
B
CLASSIFICATION OF H
FE (1)
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
1 of 2
Revision: 5
2007/03/01

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