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2SB1691WL-TL-E

Description
1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size83KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SB1691WL-TL-E Overview

1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB1691WL-TL-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeMPAK
package instructionSC-59A, MPAK-3
Contacts3
Manufacturer packaging codePLSP0003ZB-A3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)310 MHz
Base Number Matches1
Preliminary
Datasheet
2SB1691
Silicon PNP Epitaxial Planer
Low Frequency Power Amplifier
Features
R07DS0272EJ0300
(Previous: REJ03G0482-0200)
Rev.3.00
Mar 28, 2011
Small size package: MPAK (SC–59A)
Large Maximum current: I
C
= –1 A
Low collector to emitter saturation voltage: V
CE(sat)
= –0.3 V max.(at I
C
/I
B
= –0.5 A/–0.05 A)
High power dissipation: P
C
= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
Complementary pair with 2SD2655
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
1. Emitter
2. Base
3. Collector
Note:
Marking is “WL-“.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base Voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
Symbol
V
CBO
V
CEO
V
EBO
I
C
ic(peak)
P
C
Tj
Tstg
Ratings
60
50
–6
–1
–2
800*
150
55
to +150
Unit
V
V
V
A
A
mW
C
C
*When using alumina ceramic board (25 x 60 x 0.7 mm)
R07DS0272EJ0300 Rev.3.00
Mar 28, 2011
Page 1 of 4

2SB1691WL-TL-E Related Products

2SB1691WL-TL-E 2SB1691WL-TL-H 2SB1691_11
Description 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of components 1 1 1
Number of terminals 3 3 3
surface mount YES YES Yes
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL pair
transistor applications AMPLIFIER AMPLIFIER amplifier
Transistor component materials SILICON SILICON silicon
Is it lead-free? Lead free Lead free -
Is it Rohs certified? conform to conform to -
Parts packaging code MPAK SC-59A -
package instruction SC-59A, MPAK-3 SMALL OUTLINE, R-PDSO-G3 -
Contacts 3 3 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 1 A 1 A -
Collector-emitter maximum voltage 50 V 50 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 200 200 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type PNP PNP -
Maximum power dissipation(Abs) 0.8 W 0.8 W -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
Nominal transition frequency (fT) 310 MHz 310 MHz -
Base Number Matches 1 1 -
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