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2SB1691_11

Description
1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size83KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SB1691_11 Overview

1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SB1691_11 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1 A
Maximum Collector-Emitter Voltage50 V
Processing package descriptionSC-59A, MPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor200
Rated crossover frequency310 MHz
Preliminary
Datasheet
2SB1691
Silicon PNP Epitaxial Planer
Low Frequency Power Amplifier
Features
R07DS0272EJ0300
(Previous: REJ03G0482-0200)
Rev.3.00
Mar 28, 2011
Small size package: MPAK (SC–59A)
Large Maximum current: I
C
= –1 A
Low collector to emitter saturation voltage: V
CE(sat)
= –0.3 V max.(at I
C
/I
B
= –0.5 A/–0.05 A)
High power dissipation: P
C
= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
Complementary pair with 2SD2655
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
1. Emitter
2. Base
3. Collector
Note:
Marking is “WL-“.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base Voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
Symbol
V
CBO
V
CEO
V
EBO
I
C
ic(peak)
P
C
Tj
Tstg
Ratings
60
50
–6
–1
–2
800*
150
55
to +150
Unit
V
V
V
A
A
mW
C
C
*When using alumina ceramic board (25 x 60 x 0.7 mm)
R07DS0272EJ0300 Rev.3.00
Mar 28, 2011
Page 1 of 4

2SB1691_11 Related Products

2SB1691_11 2SB1691WL-TL-E 2SB1691WL-TL-H
Description 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3
surface mount Yes YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location pair DUAL DUAL
Number of components 1 1 1
transistor applications amplifier AMPLIFIER AMPLIFIER
Transistor component materials silicon SILICON SILICON
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Parts packaging code - MPAK SC-59A
package instruction - SC-59A, MPAK-3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Maximum collector current (IC) - 1 A 1 A
Collector-emitter maximum voltage - 50 V 50 V
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 200 200
JESD-30 code - R-PDSO-G3 R-PDSO-G3
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - PNP PNP
Maximum power dissipation(Abs) - 0.8 W 0.8 W
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
Nominal transition frequency (fT) - 310 MHz 310 MHz
Base Number Matches - 1 1
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