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80CNQ035PBF

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 80A, 35V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size124KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

80CNQ035PBF Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 80A, 35V V(RRM), Silicon

80CNQ035PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.47 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current5800 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current80 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
Maximum reverse current200000 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
PD-2.216 rev. C 01/99
80CNQ... SERIES
SCHOTTKY RECTIFIER
80 Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 40 Apk, T
J
= 125°C
(per leg)
range
- 55 to 150
°C
Description/Features
Units
A
V
A
V
The 80CNQ center tap Schottky rectifier module series has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150° C junction temperature. Typical
applications are in switching power supplies, converters, free-
wheeling diodes, and reverse battery protection.
150° C T
J
operation
Center tap module
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Low profile, small footprint, high current package
80CNQ...
80
35 to 45
5800
0.47
Case Styles
80CNQ...
80CNQ...SM
80CNQ...SL
D61-8
D61-8-SM
D61-8-SL
www.irf.com
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