LDM-0808 Series
TECHNICAL DATA
C-mount / TO-3
High Power Infrared Laser Diode
Features
•
CW Output Power: 0.3 W, 0.5 W, 1.0 W,
2.0 W, 3.0 W, 5.0 W
•
Variety of Emitting Area
•
High-efficiency Quantum Well Structure
•
TO Package or C-Mount
Applications
•
Solid-state Laser Pumping
•
Medical Usage
•
Target Designator
•
Free-space Communication
•
Infrared Light Sources
Specifications (25°C)
Type
LDM-0808-300m-x1
CW Output Power (W)
0.3
Peak Wavelength
Δ
(nm)
808±10
Spectral Width
Δλ
(nm)
≤2.5
Threshold Current (A)
≤0.10
Operation Current (A)
≤0.40
Operation Voltage (V)
≤2.0
Slope Efficiency (W/A)
≥1.0
Beam Divergence
θ
┴
×θ
║
(deg)
40x10
Wavelength Temperature
0.3
Coefficient (nm/°C)
Emitting Area (µm)
30x1
Series Resistance (Ω)
≤1.0
Polarization
TE
Package Style
9mm/TO3/C-Mount
Operating Temperature (°C)
10 … 40
Storage Temperature (°C)
-10 … 60
Type
CW Output Power (W)
Peak Wavelength
Δ
(nm)
Spectral Width
Δλ
(nm)
Threshold Current (A)
Operation Current (A)
Operation Voltage (V)
Slope Efficiency (W/A)
Beam Divergence
θ
┴
×θ
║
(deg)
Wavelength Temperature
Coefficient (nm/°C)
Emitting Area (µm)
Series Resistance (Ω)
Polarization
Package Style
Operating Temperature (°C)
Storage Temperature (°C)
LDM-0808-500m-x2
0.5
808±10
≤2.5
≤0.13
≤0.60
≤2.0
≥1.0
40x10
0.3
50x1
≤0.60
TE
9mm/TO3/C-Mount
10 … 40
-10 … 60
LDM-0808-003W-
x3
3.0
808±10
≤2.5
≤0.55
≤3.00
≤2.1
≥1.1
37x8
0.3
100x1
≤0.15
TM
TO3/C-Mount
10 … 40
-10 … 60
LDM-0808-001W-x3
1.0
808±10
≤2.5
≤0.26
≤1.24
≤2.0
≥1.0
40x10
0.3
100x1
≤0.30
TE
TO3/C-Mount
10 … 40
-10 … 60
LDM-0808-005W-
x5
5.0
808±10
≤2.5
≤0.75
≤5.3
≤2.1
≥1.1
37x8
0.3
200x1
≤0.05
TM
TO3/C-Mount
10 … 40
-10 … 60
LDM-0808-002W-
x5
x3
2.0
2.0
808±10
808±10
≤2.5
≤2.5
≤0.50
≤0.45
≤2.55
≤2.20
≤2.0
≤2.1
≥1.0
≥1.1
40x10
37x8
0.3
200x1
≤0.25
TE
TO3/C-Mount
10 … 40
-10 … 60
0.3
100x1
≤0.25
TM
TO3/C-Mount
10 … 40
-10 … 60
Typical Performance Curves
Notes
1. High power laser diodes are high energy laser devices. It is harmful to human body and
health. Never look directly into the laser output port.
2. High power laser diodes could operate in forward voltage. The reverse current and
voltage should not be higher than 25µA and 3V, respectively.
3. Heavy humidity can get dew on the LD then damage the LD.
4. The generated heat must be removed in time when the LD working.
5. The high temperature will effect the performance of the products. The lifetime can also
be shortened by high temperature.
6. The operating current and optical power of laser must not be higher than the given rate
current and power. The excessive current would accelerate aging and shorten lifetime,
even damage the LD.
7. The semiconductor laser diode is a sensitive electronic device. Please observe
precaution for handling electrostatitic sensitive devices.
Embedded System
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