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S71NS128NA0BJWMD0

Description
Memory Circuit, 8MX16, CMOS, PBGA44, 7.70 X 6.20 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-44
Categorystorage    storage   
File Size3MB,113 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

S71NS128NA0BJWMD0 Overview

Memory Circuit, 8MX16, CMOS, PBGA44, 7.70 X 6.20 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-44

S71NS128NA0BJWMD0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
package instruction7.70 X 6.20 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-44
Reach Compliance Codeunknown
Other featuresPSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE
JESD-30 codeR-PBGA-B44
JESD-609 codee1
length7.7 mm
memory density134217728 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals44
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width6.285 mm
S71NS128NA0/S71NS064NA0 Based MCPs
Stacked Multi-Chip Product (MCP) MirrorBit™ Flash Memory
and pSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit),
110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/
Write, Burst Mode Flash Memory with
16 Mb (1M x 16-Bit) pSRAM
Data Sheet
ADVANCE
INFORMATION
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Publication Number
S71NS128_064NA0_00
Revision
A
Amendment
1
Issue Date
September 23, 2005
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