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2SC3277N

Description
TRANSISTOR,BJT,NPN,400V V(BR)CEO,10A I(C),TO-218VAR
CategoryDiscrete semiconductor    The transistor   
File Size100KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SC3277N Overview

TRANSISTOR,BJT,NPN,400V V(BR)CEO,10A I(C),TO-218VAR

2SC3277N Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)90 W
surface mountNO
Nominal transition frequency (fT)20 MHz
Base Number Matches1
Ordering number:EN1207A
NPN Triple Diffused Planar Silicon Transistor
2SC3277
400V/10A Switching Regulator Applications
Features
· High breakdown voltage, high current.
· Wide ASO.
· Fast switching speed.
Package Dimensions
unit:mm
2022A
[2SC3277]
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
PW≤300µs, Duty Cycle≤10%
Tc=25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Conditions
Ratings
500
400
7
10
20
90
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.2A
VCE=5V, IC=6A
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
15*
8
20
120
MHz
pF
Conditions
Ratings
min
typ
max
10
10
50*
Unit
µA
µA
* : The h
FE
1 of the 2SC3277 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
15
L
30
20
M
40
30
N
50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/5097KI/2125MW, TS No.1207–1/4

2SC3277N Related Products

2SC3277N 2SC3277L
Description TRANSISTOR,BJT,NPN,400V V(BR)CEO,10A I(C),TO-218VAR TRANSISTOR,BJT,NPN,400V V(BR)CEO,10A I(C),TO-218VAR
Reach Compliance Code compli compli
Maximum collector current (IC) 10 A 10 A
Configuration Single Single
Minimum DC current gain (hFE) 30 15
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 90 W 90 W
surface mount NO NO
Nominal transition frequency (fT) 20 MHz 20 MHz
Base Number Matches 1 1
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