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SGB-2433Z

Description
Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, 1 Func, 3 X 3 MM, GREEN, QFN-16
CategoryWireless rf/communication    Radio frequency and microwave   
File Size200KB,8 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
Download Datasheet Parametric View All

SGB-2433Z Overview

Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, 1 Func, 3 X 3 MM, GREEN, QFN-16

SGB-2433Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQorvo
package instruction3 X 3 MM, GREEN, QFN-16
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Characteristic impedance50 Ω
structureCOMPONENT
Gain15.7 dB
Maximum input power (CW)20 dBm
JESD-609 codee3
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals16
Maximum operating frequency4000 MHz
Minimum operating frequency
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeLCC16,.12SQ,20
power supply3 V
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum slew rate29 mA
surface mountYES
Terminal surfaceMatte Tin (Sn)
SGB-2433(Z)
DC to 4GHz
Active Bias
Gain Block
Preliminary
SGB-2433(Z)
DC to 4GHZ ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
RFMD’s SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 3Vto5V supply the SGB-2433 does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance, and unconditional stability. The SGB-2433 prod-
uct is designed for high linearity 3V gain block applications that require small size
and minimal external components. It is on chip matched to 50Ω and an external
bias inductor choke is required for the application band.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
GND
NC
NC
NC
RFIN
NC
NC
NC
Active
Bias
NC
NC
RFOUT
Vbias
VCC
NC
NC
Features
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
Simple and Small Size
P
1dB
=6.9dBm at 1950MHz
IP
3
=18.0dBm at 1950MHz
Low Thermal
Resistance=221C/W
Applications
3V Battery Operated Applica-
tions
LO Buffer Amp
RF Pre-Driver and RF Receive
Path
NC
Parameter
Small Signal Gain
Min.
15.7
Specification
Typ.
19.1
17.2
16.2
7.7
6.9
6.2
19.5
18.0
18.0
3.5
25.0
13.4
13.6
221
Max.
18.7
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
mA
dB
dB
°C/W
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
1950MHz
Condition
Output Power at 1dB Compression
5.4
Output Third Order Intercept Point
16.0
Noise Figure
Frequency of Operation
Current, I
C
DC
21.0
4.5
4000
29.0
Input Return Loss
10.0
Output Return Loss
10.0
Thermal Resistance
Test Conditions: Z
0
=50Ω, V
CC
=3V, I
C
=25mA, T=30°C
1950MHz
1950MHz
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-103083 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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