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PMZB290UNE

Description
SMALL SIGNAL, FET
Categorysemiconductor    Discrete semiconductor   
File Size965KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

PMZB290UNE Overview

SMALL SIGNAL, FET

PMZB290UNE Parametric

Parameter NameAttribute value
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
jesd_609_codee3
moisture_sensitivity_level1
eak_reflow_temperature__cel_260
terminal coatingTIN
ime_peak_reflow_temperature_max__s_30
PMZB290UNE
83B
20 V, single N-channel Trench MOSFET
Rev. 3 — 23 March 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
SO
T8
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37mm
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; I
D
= 500 mA; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
-
Typ
-
-
-
290
Max
20
8
1
380
Unit
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
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