DATA SHEET
SEMICONDUCTOR
VOLTAGE RANGE 50 to 600 Volts
8.0 Amperes
SF801~SF807
FEATURES
•
Low forward voltage drop
•
High current capability
•
High reliability
•
High surge current capability
•
Good for switching mode application
•
High temperature soldering : 260 C / 10 seconds at terminals
O
.269(6.85)
.226(5.75)
.419(10.66)
MAX
TO-220
AC
Unit:inch(mm)
.196(5.0)
.163(4.16)
DIA
.139(3.55)
.MIN
.054(1.39)
.045(1.15)
.624(15.87)
.548(13.93)
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
PIN1
.177(4.5)
.MAX
2
3
.114(2.9)
.098(2.5)
.50(12.7)
MAX
MECHANICAL DATA
•
Case: Molded plastic
•
Epoxy: UL 94V-0 rate flame retardant
•
Lead: Lead solderable per MIL-STD-202,
method 208 guranteed
•
Polarity: As Marked
•
Mounting position: Any
•
Weight: 2.24 grams
.038(0.96)
.019(.5)
.100(2.54)
.025(0.65)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25
°C
ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectif ied Current
.375"(9.5mm) Lead Length at Tc=100
°C
Peak For ward Surge Current , 8.3 ms single half s ine-wave
super imposed on rated load (J EDEC method)
Maximum Instantaneous Forward Vol tage at 8.0A
Maxi mum DC Reverse Cur rent Tc=25
°C
at Rated DC B locking Vol tage Tc=100
°C
Maximum Reverse Recovery Time (Note 1)
Typi cal Junction Capacitance (Note 2)
Operating and Storage Temperature Range TJ, TSTG
NOTES:
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
35
50
-55 +150
0.95
10
500
50
SF801
50
35
50
SF802
100
70
100
SF803
150
105
150
SF804
200
140
200
8.0
SF805
300
210
300
SF806
400
320
400
SF807
600
420
600
UNITS
V
V
V
A
125
1.30
1.70
A
V
µA
µA
nS
pF
°C
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REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
SF801~SF807
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
trr
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
+0.5A
(+)
25Vdc
(approx.)
( )
1
Ω
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
|
|
|
|
|
|
|
|
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
CASE TEMPERATURE,( C)
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.4-TYPICAL REVERSE
1000
CHARACTERISTICS
3.0
00V
00V
REVERSE LEAKAGE CURRENT, (µA)
10
100
Tc=100 C
100
1.0
10
V-2
V-4
300
60
0V
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
Tc=25 C
1.0
.01
.4
.6
.8
1.0
1.2
1.4 1.6
1.8
0.1
0
20
40
60
80
100 120 140
FORWARD VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
125
FIG.6-TYPICAL JUNCTION CAPACITANCE
175
150
125
100
75
50
25
0
100
75
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
50
25
0
1
5
10
50
100
JUNCTION CAPACITANCE,(pF)
.01
.05
.1
.5
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
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2
REV.02 20110725
Microcontroller MCU
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