DATA SHEET
SEMICONDUCTOR
ULT RAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes
FEATURES
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
•
Void-free Plastic in DO-15 package
•
2.0 ampere operation at TA=55
O
C•with no thermal runaway
•
Exceeds environmental standards of MIL-S-19500/228
•
Ultra fast switching for high efficiency
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.300 (7.6)
.230 (5.8)
.140 (3.6)
.104 (2.6)
DIA.
1.0 (25.4)
MIN.
UF200G~UF2010G
DO-15
Unit:inch(mm)
MECHANICAL DATA
•
Case: Glass passivation, DO-15
•
Terminals: Axial leads, solderable per MIL-STD-202,
Method 208
•
Polarity: Band denotes cathode
•
Mounting Position: Any
•
Weight: 0.015 ounce, 0.4 gram
.034 (.86)
.028 (.71)
DIA.
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C J ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
SYMBOL
U200G
50
35
50
U201G
100
70
100
U202G
200
140
200
U204G
400
280
400
2.0
U206G
600
420
600
U208G
800
560
800
U2010G
1000
700
1000
UNITS
V
V
V
A
Peak Reverse Volt age, Pepetitive ; V
RM
Maximum RMS Voltage
DC Bl ocking Voltage; VR
Average Forward Current, Io @T
A
=55
°C
3.
8”
lead l ength, 60Hz, resistive or inductive load
Peak Forward Surge Current IFM (surge)
8.3msec . single half sine- wave superimposed
on rated load(JEDEC method)
Maximum Forward Voltage V
F
@2.0A, 25
°C
Maxi mum Reverse Current, @ Rated T
A
=25
°C
Reverse Voltage T
A
=100
°C
Typi cal Junction capaci tance (Note 1) CJ
Typi cal Junction Resistance (Note 2) R JA
Reverse Recovery Time
I
F
=.5A, I
R
=1A, I
rr
=.25A
Operati ng and Storage Temperature Range
NOTES:
v
RRM
v
RMS
v
DC
I
(AV)
I
FSM
VF
I
R
C
J
R
θJL
T
RR
TSTG
60
1.00
1.3
5
100
35
45
50
-55 to +150
75
1.5
1.7
A
V
µA
µA
pF
°C/W
ns
°C
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
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REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF200G~UF2010G
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
10
UF200G
TYPICAL
1
2.4
2.0
1.4
1.2
0.8
0.4
0
25
50
75
100
125
150
175
SINGLE PHASE
HALF WAVE 60Hz
RESISSTIVE OR
INDUCTIVE
LOAD .375" 9.5mm
LEAD LENGTHS
IFM, Apk
0.1
UF208G
TJ = 25
°C
0.01
0
.2
.4
.6
.8
1.0 1.2
1.4
1.6
FORWARD VOLTAGE-VFM(Vpk)
AMBIENT TEMPERATURE,
°C
Fig. 2-FORWARD CHARACTERISTICS
100
JUNCTION CAPACITANCE, pF
TJ = 25
°C
f = 1.0MHz
Vsig = 50Mvp-p
Fig. 3-FORWARD CURRENT DERATING CURVE
PEAD FORWARD SURGE CURRENT,
AMPERES
60
48
36
10
5
1
10
0
REVERSE VOLTAGE, VOLTS
10
24
12
0
1
2
4
6 8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
Fig. 4-TYPICAL JUNCTION CAPACITANCE
Fig. 5-PEAK FORWARD SURGE CURRENT
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REV.02 20110725
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