US2G datasheet, PDF - EEWORLD Datasheet

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US2G: Description2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size182KB，2 Pages; ManufacturerYEA SHIN TECHNOLOGY CO.,LTD; Websitehttp://www.yeashin.com/

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2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA

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DATA SHEET

SEMICONDUCTOR

US2A Thru US2M

SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts

ULTRA FAST RECTIFIERS FORWARD CURRENT - 2 Ampere

FEATURES

•Glass

passivated chip

•Ultra

fast switching for high efficiency

•For

surface mounted applications

•Low

forward voltage drop and high current capability

•Low

reverse leakage current

•Plastic

material has UL flammability classification 94V-0

•

High temperature soldering : 260

C / 10 seconds at terminals

•

Pb free product at available : 99% Sn above meet RoHS environment

substance directive request

.181 (4.60)

.157(4.00)

SMA/DO-214AC

.062(1.60)

.047(1.20)

Unit:inch(mm)

.114(2.90)

.098(2.50)

MECHANCALDATA

•Case:

ITO-220AB full molded plastic package

•Case

: Molded plastic

•Polarity

: Indicated by cathode band

•Weight

: 0.002 ounces, 0.064 grams

.096(2.44)

.078(2.00)

.012(.305)

.006(.152)

.008(.203 )

.002(.051)

.208(5.28)

.188(4.80)

.060(1.52)

.030(0.76)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

@TL =75°C

SYMBOL

VRRM

VRMS

VDC

IAV

US2A

US2B

100

US2D

200

140

200

US2G

400

280

400

2.0

US2J

600

420

600

US2K

800

560

800

US2M

1000

700

1000

UNITS

Peak Forward Surge Current

8.3ms single half sine-wave

super imposed on rated load (JEDEC METHOD)

Maximum forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ =25°C

@TJ =100°C

TRR

RӨJC

TSTG

-55 to +150

1.0

1.3

100

1.5

1.7

µA

°C/W

°C

IFSM

Maximum Reverse Recovery Time (Note 1)

Typical Junction

Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Temperature Range

Storage Temperature Range

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I

=.5A, I

=1A, Irr=.25A.

3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.

http://www.yeashin.com

REV.02 20110725

US2G Related Products

	US2G	US2A	US2B	US2D	US2J	US2K	US2M
Description	2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 50 V, SILICON, RECTIFIER DIODE	2 A, 100 V, SILICON, RECTIFIER DIODE	2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 1000 V, SILICON, RECTIFIER DIODE

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