output which proportional to the magnetic field strength and pole.
¡Magnetic
sensitivity 130mV/mT(typ.)
¡Supply
voltage from 3.0V to 5.5V at single power supply
¡Operating
temperature range -40℃∼100℃
¡Ratio-metric
analog output
¡3pin
surface mount plastic package
¡Quick
response 4 μs
(when the rise-up time of magnetic field is rather than 1μs)
¡Low
output noise voltage 10mVp-p
Shipped in packet-tape reel(5000pcs/Reel)
EQ-430L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue.
●Operational Characteristics
Vout
N
●Pin and functions
2
Vcc
VsatH
Marking
（Top View）
1 VCC
：
3
1
2 GND
：
3 OUT
：
S
VoutO
3
1
VsatL
S
0
Magnetic flux density
N
Pin No.
1
2
3
Pin name
VCC
GND
OUT
Function
Power supply
Ground
Output
●Functional Block Diagram
1:VCC
●Application Circuit
（Top View）
3:OUT
2:GND
Hall Element
Amplifier
OUT
0.1μF
VCC
5V
GND
Please add LPF if required.
●Absolute Maximum Ratings
（Ta=25℃）
parameter
symbol specification
−
0.3
∼
6
●Recommend
operating conditions
parameter
Supply voltage
symbol
min
typ
max
unit
unit
V
mA
℃
℃
Supply voltage
Vcc
output current
Iout
V
CC
3.0
−1.0
5.0
5.5
1.0
1000
V
mA
pF
±1.2
（＊）
−
40
∼
100
−
40
∼
125
output current
I
OUT
output load
operating ambient
t e m p e r a t u r e
Topr
Storage ambient
Tstg
temperature
（＊）
Vcc＝5V
C
L
EQ-430L
●Electric characteristics
A
＝25℃, V
CC
＝5V）
（T
Parameter
Current
consumption
(*1)
(*1)
Symbol
I
CC
Conditions
B=0mT with no load
min
Typ
9
Max
12
V
CC
0.3
Unit
mA
V
V
kHz
Output saturation voltage at High Level
Output saturation voltage at Low Level
B a n d w i d t h
V
SATH
I
OUT
＝ー1mA
V
SATL
f
T
I
OUT
＝1mA
ー3dB C
L
＝1000pF
Rise time : 10% of Input MFD to 90% of output voltage.
Fall time: 90% of Input MFD to 10% of output voltage.
(under input/output MFD step is 1 to 2μs)
C
L
＝1000pF
10% to 90% of output voltage under
input/output MFD step is 1 to 2μs.
C
L
＝1000pF
90% to 10% of output voltage under
input/output MFD step is 1 to 2μs
C
L
＝1000pF
Rise time : 10% of Input MFD to 10% of output voltage.
Fall time: 90% of Input MFD to 90% of output voltage.
(under input/output MFD step is 1 to 2μs)
C
L
＝1000pF
V
CC
−0.3
0
70
(*2)
Response time
(*2)
t
RES
4
μs
Output rise time
(*2)
t
RISE
5
μs
Output fall time
(*2)
t
FALL
Output delay time
(*2)
t
REAC
0.3
μs
Output noise voltage
(*2)
V
Np-p
10
mVp-p
※1mT = 10Gauss
(*1&2) Design target at 25℃
●Magnetic characteristics
A
＝25℃, V
CC
＝5V）
（T
Parameter
Sensitivity
(*3)
Symbol
V
h
Conditions
B=0、
±11mT with no load
B＝0mT (I
OUT
＝0mA)
B＝±13mT (I
OUT
＝±1mA)
min Typ Max Unit
110 130 150 mV/mT
2.3
−0.5
2.5
2.7
V
●Ratio-metric characteristics
A
＝25℃）
（T
Parameter
Error in Ratiometric of
Magnetic sensitivity
(*5)
Symbol
V
h-R
Conditions
B=0、
±11mT with no load
min Typ Max Unit
−3
−3
3
3
%
%
Quiescent voltage
V
OUT0
B＝0mT
L i n e a r i t y
(*4)
ρ
0.5 ％F.S.
Error in Ratiometric of
B＝0mT
V
Quiescent voltage
(*5)
OUT0-R
(*5) See Characteristic Definitions section
(*3) See Characteristic Definitions section
(*4) See Characteristic Definitions section
※1mT = 10Gauss
※1mT = 10Gauss
●Characteristic Definitions
①Magnetic sensitivity V
h
(mV/mT)
Magnetic sensitivity is defined as the slope of the straight line
obtained from three points, Quiescent voltage V
OUT0
、
OUT
V
(＋B)、
OUT
(−B) (B is described in measurement condition),
V
by the least square approximation.
②Linearity ρ (%F.S.)
Linearity is defined as the ratio of a error voltage against
FULLSCALE. Where error voltage is calculate as the
difference from the straight line obtained from three points,
Quiescent voltage V
OUT0
、
OUT
(＋B)、
OUT
(−B) (B and
V
V
Output current are described in measurement condition
shown below), by the least square approximation.
〈Condition〉0mT applied、
OUT
= 0mA
：
I
＋BmT applied : I
OUT
＝＋1.0mA
（Draw out from output）
−BmT applied : I
OUT
＝−1.0mA
（Draw in to output）
（B）½V
h
×B＋V
int
½
ー
V
out
ρ＝ ×100
（＋B）
out
ーV （ーB）
V
out
Where FULLSCALE(F.S.) is defied as V
OUT
(＋B)、
OUT
(−B),
V
Vint is y-intercepts of the line obtained in the Definition of
Magnetic sensitivity.
③Error in Ratiometric of Magnetic sensitivity and Error in
Ratiometric of quiescent voltage
Error in ratiometric is defined as the ratio of the variation of
sensitivity and quiescent voltage at 3V and 5V as following
equations..
V（V
CC
＝3V） 3
V
OUT0
V
CC
＝3V） 3
h
（
−
−
h
（
V（V
CC
＝5V） 5
V
OUT0
V
CC
＝5V） 5
V
hーR
＝ ×100 V
OUT0ーR
＝ ×100
3
3
5
5
④Response time t
RES
(μs)
Response time is defined as the time from the 90% reach
point of input magnetic field rise up to the 90% reach point of
output voltage rise up
⑤Output rise time, Output fall time t
RISE
、
FALL
t （μs）
Output rise up time is defined as the time from the 10% point
to the 90% point of output voltage under a pulse like
magnetic field input shown below.
Output fall down time is defined as the time from the 90%
point to the 10% point of output voltage under a pulse like
magnetic field input shown below.
⑥Output delay time t
REAC
μs）
（
Output delay time is defined as the time from the 10% point
in rise up(90% point in fall down) of input magnetic field to
the 10% point in rise up(90% point in fall down) of output
voltage under a pulse like magnetic field input shown below..
〈Relations of the input Magnetic field and t
RES
、
RISE
、
FALL
、
t
t
t
REAC
〉
Rise time of magnetic field
1∼2μs
90％
90％
Fall time of magnetic field
1∼2μs
Input magnetic field
10％
t
RES
t
RISE
90％
90％
t
REA
10％
t
REA
t
RES
t
FALL
10％
Output voltage
of sensor
10％
EQ-430L
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
•This product contains galium arsenide(GaAs).Handling and discarding precsutions required.
●Package（Unit:mm)
0.6
●(For
reference only)Land Pattern
（Unit:mm)
0.90
2
4.4
±0.2
3.0
±0.1
0.61
（0.65）
0.70
0∼0.1
1.00
0.70
4.00
Vcc＝5V
Vcc＝4V
Vcc＝3V
Ta＝25℃
10
15
3
3.6
±0.1
2.6
±0.1
1
0.8
±0.1
1.2
±0.1
1.30 1.30
1 VCC
：
2 GND
：
0.4
0.4
3 OUT
：
※The sensor senter is located within the φ0.3mm circle.
●Supply Voltage
6
5.5
●Operational Characteristics
5.0
4.5
Output Voltage〔V〕
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Supply Voltage〔V〕
5
4.5
4
3.5
3
2.5
2
-40
0.5
-20
0
20
40
60
80
100
120
0.0
-25
1.00
φ
0.3
Sensor center
0.15
-20
-15
-10
-5
0
5
20
25
Ambient Temperature〔℃〕
Magnetic flux density〔mT〕
●Temperature dependence of VH
160
●
（For reference only）
Temperature dependence of Vout0
3.0
Magnetic Sensitivity〔mV/mT〕
140
120
100
80
60
40
20
0
-40
-20
0
20
40
60
80
100
120
Ambient Temperature〔℃〕
1.0
-40
-20
0
20
40
60
80
Offset Voltage〔V〕
Vcc＝5V
Vcc＝4V
Vcc＝3V
2.5
Vcc＝5V
2.0
Vcc＝4V
1.5
Vcc＝3V
B＝0mT
100
120
Ambient Temperature〔℃〕
IMPORTANT NOTICE
These products and their specifications are subject to change without notice.
When you consider any use or application of these products, please make
inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or
authorized distributors as to current status of the products.
Descriptions of external circuits, application circuits, software and other related
information contained in this document are provided only to illustrate the
operation and application examples of the semiconductor products. You are
fully responsible for the incorporation of these external circuits, application
circuits, software and other related information in the design of your
equipments. AKM assumes no responsibility for any losses incurred by you or
third parties arising from the use of these information herein. AKM assumes no
liability for infringement of any patent, intellectual property, or other rights in
the application or use of such information contained herein.
Any export of these products, or devices or systems containing them, may
require an export license or other official approval under the law and
regulations of the country of export pertaining to customs and tariffs, currency
exchange, or strategic materials.
AKM products are neither intended nor authorized for use as critical
components
Note1)
in any safety, life support, or other hazard related device or
system
Note2)
, and AKM assumes no responsibility for such use, except for the
use approved with the express written consent by Representative Director of
AKM. As used here:
Note1) A critical component is one whose failure to function or perform
may reasonably be expected to result, whether directly or indirectly, in the
loss of the safety or effectiveness of the device or system containing it,
and which must therefore meet very high standards of performance and
reliability.
Note2) A hazard related device or system is one designed or intended for
life support or maintenance of safety or for applications in medicine,
aerospace, nuclear energy, or other fields, in which its failure to function
or perform may reasonably be expected to result in loss of life or in
significant injury or damage to person or property.
It is the responsibility of the buyer or distributor of AKM products, who
distributes, disposes of, or otherwise places the product with a third party, to
notify such third party in advance of the above content and conditions, and
the buyer or distributor agrees to assume any and all responsibility and
liability for and hold AKM harmless from any and all claims arising from the
use of said product in the absence of such notification.
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