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ET2147HJ1

Description
IC,SRAM,4KX1,MOS,DIP,18PIN,CERAMIC
Categorystorage    storage   
File Size356KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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ET2147HJ1 Overview

IC,SRAM,4KX1,MOS,DIP,18PIN,CERAMIC

ET2147HJ1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Codecompliant
Maximum access time35 ns
I/O typeSEPARATE
JESD-30 codeR-XDIP-T18
memory density4096 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of terminals18
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4KX1
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Minimum standby current4.5 V
Maximum slew rate0.18 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

ET2147HJ1 Related Products

ET2147HJ1 ET2147HN2 ET2147HN3 ET2147HN1 ET2147HJ3
Description IC,SRAM,4KX1,MOS,DIP,18PIN,CERAMIC IC,SRAM,4KX1,MOS,DIP,18PIN,PLASTIC IC,SRAM,4KX1,MOS,DIP,18PIN,PLASTIC IC,SRAM,4KX1,MOS,DIP,18PIN,PLASTIC IC,SRAM,4KX1,MOS,DIP,18PIN,CERAMIC
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code compliant not_compliant not_compliant not_compliant compli
Maximum access time 35 ns 45 ns 55 ns 35 ns 55 ns
I/O type SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE
JESD-30 code R-XDIP-T18 R-PDIP-T18 R-PDIP-T18 R-PDIP-T18 R-XDIP-T18
memory density 4096 bit 4096 bit 4096 bit 4096 bit 4096 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 1 1 1 1 1
Number of terminals 18 18 18 18 18
word count 4096 words 4096 words 4096 words 4096 words 4096 words
character code 4000 4000 4000 4000 4000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C
organize 4KX1 4KX1 4KX1 4KX1 4KX1
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC
encapsulated code DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP18,.3 DIP18,.3 DIP18,.3 DIP18,.3 DIP18,.3
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Minimum standby current 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Maximum slew rate 0.18 mA 0.18 mA 0.18 mA 0.18 mA 0.18 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO
technology MOS MOS MOS MOS MOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL
Maker STMicroelectronics - - STMicroelectronics STMicroelectronics
package instruction - DIP, DIP18,.3 DIP, DIP18,.3 DIP, DIP18,.3 -
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