IC,SRAM,4KX1,MOS,DIP,18PIN,PLASTIC
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | STMicroelectronics |
| package instruction | DIP, DIP18,.3 |
| Reach Compliance Code | not_compliant |
| Maximum access time | 35 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-PDIP-T18 |
| memory density | 4096 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 1 |
| Number of terminals | 18 |
| word count | 4096 words |
| character code | 4000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 4KX1 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP18,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.18 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | MOS |
| Temperature level | COMMERCIAL |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| ET2147HN1 | ET2147HN2 | ET2147HN3 | ET2147HJ1 | ET2147HJ3 | |
|---|---|---|---|---|---|
| Description | IC,SRAM,4KX1,MOS,DIP,18PIN,PLASTIC | IC,SRAM,4KX1,MOS,DIP,18PIN,PLASTIC | IC,SRAM,4KX1,MOS,DIP,18PIN,PLASTIC | IC,SRAM,4KX1,MOS,DIP,18PIN,CERAMIC | IC,SRAM,4KX1,MOS,DIP,18PIN,CERAMIC |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | compliant | compli |
| Maximum access time | 35 ns | 45 ns | 55 ns | 35 ns | 55 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-PDIP-T18 | R-PDIP-T18 | R-PDIP-T18 | R-XDIP-T18 | R-XDIP-T18 |
| memory density | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bi |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 18 | 18 | 18 | 18 | 18 |
| word count | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words |
| character code | 4000 | 4000 | 4000 | 4000 | 4000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 4KX1 | 4KX1 | 4KX1 | 4KX1 | 4KX1 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Minimum standby current | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Maximum slew rate | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO |
| technology | MOS | MOS | MOS | MOS | MOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maker | STMicroelectronics | - | - | STMicroelectronics | STMicroelectronics |
| package instruction | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | - | - |
京公网安备 11010802033920号
EEWORLD
