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T2009N32TOF

Description
Silicon Controlled Rectifier, 4500A I(T)RMS, 2050000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size189KB,9 Pages
ManufacturerEUPEC [eupec GmbH]
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T2009N32TOF Overview

Silicon Controlled Rectifier, 4500A I(T)RMS, 2050000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element,

T2009N32TOF Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Nominal circuit commutation break time300 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current350 mA
JESD-30 codeO-CEDB-X4
Maximum leakage current300 mA
On-state non-repetitive peak current42500 A
Number of components1
Number of terminals4
Maximum on-state current2050000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current4500 A
Off-state repetitive peak voltage3200 V
Repeated peak reverse voltage3200 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationEND
Trigger device typeSCR

T2009N32TOF Preview

N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 2001N
Elektrische Eigenschaften
V
DRM
,V
RRM
3000
3400
3600
V
DRM
,V
RRM
3100
3500
3700
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
c r
(dv
D
/dt)
c r
3200 V
3500 V
V
3300 V
3600 V
V
4460 A
2060 A
2840 A
44000 A
41000 A
9680 10³ A²s
8400 10³ A²s
300 A/µs
Elektrisch e Eig enschaften / Electrical properties
Höchstzul ässige Werte / M aximum rated val ues
Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T
vj
= -40°C... T
v j max
Kenndaten
repetiti ve peak forward off-state and revers e voltages
Periodische Vorwärts- und Rüc kwärts-Spitzensperrspannung T
vj
= 0°C... T
v j max
repetiti ve peak forward off-state and revers e voltages
Durchlaßstrom-Grenzeffekti vwert
maxi mum RMS on-state current
Dauergrenzstrom
average on-state c urrent
Stoßstrom-Grenz wert
surge current
Grenzlastintegral
I²t-value
Kritische Str omsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85 °C
T
C
= 60 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 3 A, di
G
/dt = 6 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuc hstabe / 5
th
letter H
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleus ens pannung
threshold voltage
Ersatzwi derstand
slope resistanc e
Durchlaßkennlinie
on-state c haracteristic
v
T
T
vj
= T
vj max
, i
T
= 2000A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
typ.
A
B
C
D
A
B
C
D
typ.
max.
typ.
max.
typ.
max.
1,35 V
1,5 V
0,9 V
1 V
0,225 mΩ
0,25 mΩ
=
A
+
B
i
T
+
C
Ln ( i
T
+
1)
+
D
i
T
max.
Zündstr om
gate trigger current
Zünds pannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rüc kwärts-Sperrstrom
forward off-state and reverse c urrent
Zündverzug
gate controlled delay ti me
prepar ed by: C. Schneider
approved by: J. Przybilla
T
vj
= 25°C, v
D
= 12 V
T
vj
= 25°C, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 12 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12 V
T
vj
= 25°C, v
D
= 12 V, R
GK
10
i
GM
= 3 A, di
G
/dt = 6 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 60747-6
T
vj
= 25 °C,i
GM
= 3 A, di
G
/dt = 6 A/µs
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
-0,0978
0,000187
0,15
-0,00173
-0,0981
0,000153
0,143
0,00466
max.
350 mA
max.
max.
max.
max.
max.
max.
max.
max.
2,5 V
20 mA
10 mA
0,4 V
350 mA
3 A
400 mA
1,5 µs
date of publication: 2005-04-15
revision:
5
BIP AM / SM PB, 2001-04-09, Przybilla J. /
Keller
Seite/page
1/9
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 2001N
Thermische Eigenschaften
Mechanische Eigenschaften
T
v j
= T
v j max
, i
TM
= I
TAVM
v
RM
= 100 V, v
DM
= 0,67 V
DRM
dv
D
/dt = 20 V/µs, -di
T
/dt = 10 A/µs
4.Kennbuc hstabe / 4
th
letter O
T
v j
= T
v j max
i
TM
= I
TAVM
, -di
T
/dt = 10 A/µs
V
R
= 0,5V
RRM
, V
RM
= 0,8V
RRM
T
v j
= T
v j max
i
TM
= I
TAVM
, -di
T
/dt = 10 A/µs
V
R
= 0,5V
RRM
, V
RM
= 0,8V
RRM
t
q
Elektrisch e Eig enschaften / Electrical properties
Charakteristische Werte / Characteristic values
Freiwerdezeit
circuit commutated turn-off ti me
typ.
Q
r
max.
I
RM
max.
300
µs
Sperr verzögerungsladung
recovered charge
Rückstr oms pitze
peak reverse r ecover y c urrent
8,5
mAs
270
A
Thermische Eigenschaften / Th ermal properties
Innerer Wärmewiderstand
thermal resistance, junc tion to c ase
Kühlfläc he / cooling surfac e
beids eitig / two-sided,
θ
= 180°sin
beids eitig / two-sided, DC
Anode / anode, DC
Kathode / c athode, DC
Kühlfläc he / cooling surfac e
beids eitig / two-sided
einseitig / single-sided
R
thJ C
max.
max.
max.
max.
0,0087
0,008
0,015
0,017
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewi derstand
thermal resistance, cas e to heatsi nk
Höchstzul ässige Sperrschichttemperatur
maxi mum junction temperature
Betriebs temperatur
operating temperature
Lagertemperatur
storage temperature
R
thCH
T
v j max
T
c op
T
s tg
max. 0,0025
°C/W
°C/W
max. 0,005
125 °C
-40...+125 °C
-40...+150 °C
Mechanische Eigen schaften / Mech anical properties
Gehäuse, siehe Anlage
case, s ee annex
Si-Element mit Druc kkontakt
Si-pellet with press ure contac t
Anpress kraft
clampi ng force
Steueransc hlüss e
control terminals
Gewic ht
weight
Kriechstrec ke
creepage distance
Schwingfestigkeit
vibration r esistanc e
f = 50 Hz
DIN 46244
Gate
Kathode /Cathode
G
typ.
F
Seite 3
page 3
36...52
A 4,8x0,8
A 6,3x0,8
kN
1400 g
33 mm
50 m/s²
BIP AM / SM PB, 2001-04-09, Przybilla J. /
Keller
Seite/page
2/9
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 2001N
Maßbild
4 5
1
2
1:
Anode/Anode
2:
Kathode/Cathode
4:
Gate
5:
Hilfskathode/
Cathode
(control terminal)
BIP AM / SM PB, 2001-04-09, Przybilla J. /
Keller
Seite/page
3/9
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T 2001N
R,t – Werte
R
R,T-Werte
beidseitig
two-sided
Analytische Elemente des transienten Wärmew iderstandes Z
thJC
Analytical elements of transient thermal impedance Z
thJC
Pos. n
R
thn
[°C/W]
1
0,00137
1,25
0,00837
7,63
0,01037
9,46
2
0,004
0,27
0,004
0,27
0,004
0,27
3
0,0017
0,056
0,0017
0,056
0,0017
0,056
4
0,0008
0,0068
0,0008
0,0068
0,0008
0,0068
5
0,00013
0,0017
0,00013
0,0017
0,00013
0,0017
6
7
τ
n
[s]
R
thn
[°C/W]
anodenseitg
anode-sided
τ
n
[s]
R
thn
[°C/W]
kathodenseitig
cathode-sided
τ
n
[s]
Analytische Funktion / Analytical function:
Z
thJC
=
n
max
n=1
Σ
R
thn
1
e
-t
τ
n
0,02
0,018
0,016
a
0,014
0,012
0,01
d
0,008
0,006
0,004
0,002
0
100
Z
th J C
[K/W]
c
0,001
0,01
0,1
t [s]
1
10
Transienter innerer Wärmewiderstand für DC/ Transient thermal impedance Z
Beidseitige Kühlung / Two-sided cooling
Anodenseitige Kühlung / Anode-sided cooling
Kathodenseitige Kühlung / Cathode-sided cooling
thJC
= f(t) for DC
BIP AM / SM PB, 2001-04-09, Przybilla J. /
Keller
Seite/page
4/9
N
Netz-Thyristor
Phase Control Thyristor
4500
Datenblatt / Data sheet
T 2001N
Diagramme
Diagramme
4000
Durchlasskennlinie
3500
3000
2500
i
T
[V]
typ
2000
m ax.
1500
1000
500
0
0
0,5
1
v
T
[V]
1,5
2
2,5
Grenzdurchlaßkennlinie / Limiting on-state characteristic i
T
= f(v
T
)
T
vj
= T
vj max
BIP AM / SM PB, 2001-04-09, Przybilla J. /
Keller
Seite/page
5/9

T2009N32TOF Related Products

T2009N32TOF T2001N36TOF T2009N34TOF T2009N36TOF
Description Silicon Controlled Rectifier, 4500A I(T)RMS, 2050000mA I(T), 3200V V(DRM), 3200V V(RRM), 1 Element, Silicon Controlled Rectifier, 4500A I(T)RMS, 2050000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element, Silicon Controlled Rectifier, 4500A I(T)RMS, 2050000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element, Silicon Controlled Rectifier, 4500A I(T)RMS, 2050000mA I(T), 3600V V(DRM), 3600V V(RRM), 1 Element,
Maker EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH] EUPEC [eupec GmbH]
Reach Compliance Code unknown unknown unknown unknow
Nominal circuit commutation break time 300 µs 300 µs 300 µs 300 µs
Configuration SINGLE SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 300 mA 300 mA 300 mA 300 mA
Maximum DC gate trigger voltage 2.5 V 2.5 V 2.5 V 2.5 V
Maximum holding current 350 mA 350 mA 350 mA 350 mA
JESD-30 code O-CEDB-X4 O-CEDB-X4 O-CEDB-X4 O-CEDB-X4
Maximum leakage current 300 mA 300 mA 300 mA 300 mA
On-state non-repetitive peak current 42500 A 42500 A 42500 A 42500 A
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Maximum on-state current 2050000 A 2050000 A 2050000 A 2050000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 4500 A 4500 A 4500 A 4500 A
Off-state repetitive peak voltage 3200 V 3600 V 3400 V 3600 V
Repeated peak reverse voltage 3200 V 3600 V 3400 V 3600 V
surface mount YES YES YES YES
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location END END END END
Trigger device type SCR SCR SCR SCR

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