Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1507
DESCRIPTION
・With
TO-220 package
・High
collector-emitter voltage
:
V
CEO
=300V
・High
frequency:f
T
=40MHz(Min)
APPLICATIONS
・For
color TV chroma output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
固电
IN
导½
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
300
300
7
0.2
UNIT
V
V
V
A
W
℃
℃
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
15
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
CONDITIONS
I
C
=10μA ;I
E
=0
I
C
=10mA ;I
B
=0
I
E
=10μA ;I
C
=0
I
C
=50mA ;I
B
=5mA
V
CB
=200V;I
E
=0
V
EB
=7V; I
C
=0
I
C
=10mA ; V
CE
=10V
I
E
=0; V
CB
=50V;f=1MHz
I
C
=10mA ; V
CE
=30V
40
40
4
MIN
300
300
7
2SC1507
TYP.
MAX
UNIT
V
V
V
2.0
100
100
240
V
μA
μA
固电
O
Transition frequency
导½
半
Y
120-240
pF
MHz
h
FE
classifications
R
40-80
IN
70-140
ANG
CH
MIC
E SE
DUC
ON
80
OR
T
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1507
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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