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1.5SMB56CA

Description
Trans Voltage Suppressor Diode,
CategoryDiscrete semiconductor    diode   
File Size790KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

1.5SMB56CA Overview

Trans Voltage Suppressor Diode,

1.5SMB56CA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
Objectid7342609288
package instructionR-PDSO-C2
Reach Compliance Codeunknown
compound_id317379374
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage58.8 V
Minimum breakdown voltage53.2 V
Breakdown voltage nominal value56 V
Maximum clamping voltage99.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityBIDIRECTIONAL
Maximum power dissipation5 W
GuidelineIEC-61000-4-2, 4-4
Maximum repetitive peak reverse voltage47.8 V
Maximum reverse current1 µA
Reverse test voltage47.8 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Surface Mount – 1500W > 1.5SMB Series
1000W 1KSMB series
TVS Diodes
1.5SMB Series
Uni-directional
Bi-directional
Description
RoHS
Pb
e3
The 1.5SMB Series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• For surface mounted
applications to optimize
board space
• Low profile package
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• ESD protection of data
lines in accordance with
IEC 61000-4-2, 30kV(Air),
30kV (Contact)
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Built-in strain relief
• Glass passivated chip
junction
• 1500W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• Excellent clamping
capability
• Low incremental surge
resistance
• Meet MSL level 1 per
J-STD-020, and high
temperature soldering
guaranteed: 260C/10sec
• Matte tin lead–free Plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2
nd
level
interconnect is Pb-free
and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10/1000μs Waveform (Fig.2)
(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
Only
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
1500
5.0
120
5.0
-65 to 150
-65 to 175
20
100
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
component only, duty cycle=4 per minute maximum.
Functional Diagram
Applications
TVS components are ideal for the protection of I/O
Interfaces, V
CC
bus and other vulnerable circuits used in
Telecom, Computer, Industrial and Consumer electronic
applications.
Bi-directional
Cathode
Uni-directional
Anode
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/27/19
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