MMS8050-H-TP-HF datasheet, PDF

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MMS8050-H-TP-HF: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), NPN,; CategoryDiscrete semiconductor The transistor; File Size202KB，2 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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MMS8050-H-TP-HF Overview

Small Signal Bipolar Transistor, 0.5A I(C), NPN,

MMS8050-H-TP-HF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Micro Commercial Components (MCC)
package instruction	,
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Configuration	Single
Minimum DC current gain (hFE)	200
Humidity sensitivity level	1
Maximum operating temperature	150 °C
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Maximum time at peak reflow temperature	10
Nominal transition frequency (fT)	150 MHz

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

MMS8050-L

MMS8050-H

Features

•

Halogen

free available upon request by adding suffix "-HF"

SOT-23 Plastic-Encapsulate Transistors

Capable of 0.3Watts(Tamb=25

C) of Power Dissipation.

Collector-current 0.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55

C to +150

Marking Code: J3Y

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

NPN Silicon

Plastic-Encapsulate

Transistor

SOT-23

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

Parameter

Collector-Base Breakdown Voltage

=100uAdc, I

=0)

Collector-Emitter Breakdown Voltage

=0.1mAdc, I

=0)

Emitter-Base Breakdown Voltage

=100uAdc, I

=0)

Collector Cutoff Current

=40Vdc, I

=0)

Collector Cutoff Current

=20Vdc, I

=0)

Emitter Cutoff Current

=5.0Vdc, I

=0)

DC Current Gain

=50mAdc, V

=1.0Vdc)

DCCurrent Gain

=500mAdc, V

=1.0Vdc)

Collector-Emitter Saturation Voltage

=500mAdc, I

=50mAdc)

Base-Emitter Saturation Voltage

=500mAdc, I

=50mAdc)

Base- Emitter Voltage

=100mAdc)

Transistor Frequency

=20mAdc, V

=6.0Vdc, f=30MHz)

Min

5.0

---

Max

---

0.1

Units

OFF CHARACTERISTICS

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

Vdc

uAdc

DIM

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MAX

.120

.104

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

ON CHARACTERISTICS

FE(1)

FE(2)

CE(sat)

BE(sat)

120

---

350

---

0.6

1.2

1.4

---

Vdc

Suggested Solder

Pad Layout

.031

.800

SMALL-SIGNAL CHARACTERISTICS

150

---

MHz

.035

.900

.079

2.000

inches

CLASSIFICATION OF H

FE (1)

Rank

Range

120-200

200-350

.037

.950

.037

.950

www.mccsemi.com

Revision:

1 of 2

2013/01/01

MMS8050-H-TP-HF Related Products

	MMS8050-H-TP-HF	MMS8050-L-TP-HF
Description	Small Signal Bipolar Transistor, 0.5A I(C), NPN,	Small Signal Bipolar Transistor, 0.5A I(C), NPN,
Is it Rohs certified?	conform to	conform to
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Configuration	Single	Single
Minimum DC current gain (hFE)	200	120
Humidity sensitivity level	1	1
Maximum operating temperature	150 °C	150 °C
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W
surface mount	YES	YES
Maximum time at peak reflow temperature	10	10
Nominal transition frequency (fT)	150 MHz	150 MHz

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