2N5322LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N5322LEADFREE: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size501KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N5322LEADFREE Overview

Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

2N5322LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	75 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Maximum off time (toff)	1000 ns
Maximum opening time (tons)	100 ns
Base Number Matches	1

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2N5320 2N5321

2N5322 2N5323

NPN

PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

SWITCHING TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5320, 2N5322

series types are complementary silicon power

transistors manufactured by the epitaxial planar process,

designed for amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEV

VCEO

VEBO

IC

IB

PD

TJ, Tstg

Θ

JA

Θ

JC

2N5320

2N5322

100

75

6.0

2N5321

2N5323

75

50

5.0

UNITS

V

A

W

°C

°C/W

2.0

1.0

10

-65 to +200

175

17.5

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

2N5320

2N5322

SYMBOL

TEST CONDITIONS

MIN

MAX

ICBO

VCB=80V

-

0.5

ICBO

VCB=60V

-

IEBO

BVCEV

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

hFE

fT

VEB=5.0V

VEB=4.0V

IC=100μA, VBE=1.5V

IC=10mA

IE=100μA

IC=500mA, IB=50mA (2N5320)

IC=500mA,

VCE=4.0V,

VCE=2.0V,

IB=50mA (2N5321)

IB=50mA (2N5322)

IB=50mA (2N5323)

IC=500mA

IC=1.0A

-

100

75

6.0

-

30

10

50

0.1

-

0.5

-

0.7

-

1.1

150

-

2N5321

2N5323

MIN

MAX

-

5.0

-

75

50

5.0

-

40

-

50

-

0.5

-

0.8

-

1.2

1.4

250

-

UNITS

μA

V

VCE=4.0V, IC=50mA, f=10MHz

MHz

R4 (11-June 2012)

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Description	Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), PNP,	Small Signal Bipolar Transistor, 2A I(C), NPN,
Is it Rohs certified?	conform to	incompatible	conform to	conform to	conform to	incompatible	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	,	,
Reach Compliance Code	compli	_compli	compli	compli	compli	_compli	not_compliant
Maximum collector current (IC)	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	Single	Single
Minimum DC current gain (hFE)	30	10	30	40	40	40	40
JESD-609 code	e3	e0	e3	e3	e3	e0	e0
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	260	260	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	NPN	NPN	PNP	NPN	PNP	NPN
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	10	NOT SPECIFIED	10	10	10	NOT SPECIFIED	NOT SPECIFIED
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
Is it lead-free?	Lead free	Contains lead	Lead free	Lead free	Lead free	-	-
Parts packaging code	TO-39	TO-39	TO-39	TO-39	TO-39	-	-
Contacts	3	3	3	3	3	-	-
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	-	-
Collector-emitter maximum voltage	75 V	75 V	75 V	50 V	50 V	-	-
JEDEC-95 code	TO-39	TO-39	TO-39	TO-39	TO-39	-	-
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	-	-
Number of components	1	1	1	1	1	-	-
Number of terminals	3	3	3	3	3	-	-
Package body material	METAL	METAL	METAL	METAL	METAL	-	-
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	-	-
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	-
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	-	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-	-
Maximum off time (toff)	1000 ns	800 ns	800 ns	1000 ns	800 ns	-	-
Maximum opening time (tons)	100 ns	80 ns	80 ns	100 ns	80 ns	-	-
Base Number Matches	1	1	1	1	1	1	-

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