2N5323TIN/LEAD datasheet, PDF - EEWORLD Datasheet

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2N5323TIN/LEAD: DescriptionSmall Signal Bipolar Transistor, 2A I(C), PNP,; CategoryDiscrete semiconductor The transistor; File Size501KB，2 Pages; ManufacturerCentral Semiconductor

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2N5323TIN/LEAD Overview

Small Signal Bipolar Transistor, 2A I(C), PNP,

2N5323TIN/LEAD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	_compli
Maximum collector current (IC)	2 A
Configuration	Single
Minimum DC current gain (hFE)	40
JESD-609 code	e0
Maximum operating temperature	200 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	10 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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2N5320 2N5321

2N5322 2N5323

NPN

PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

SWITCHING TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5320, 2N5322

series types are complementary silicon power

transistors manufactured by the epitaxial planar process,

designed for amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-39 CASE

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEV

VCEO

VEBO

IC

IB

PD

TJ, Tstg

Θ

JA

Θ

JC

2N5320

2N5322

100

75

6.0

2N5321

2N5323

75

50

5.0

UNITS

V

A

W

°C

°C/W

2.0

1.0

10

-65 to +200

175

17.5

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

2N5320

2N5322

SYMBOL

TEST CONDITIONS

MIN

MAX

ICBO

VCB=80V

-

0.5

ICBO

VCB=60V

-

IEBO

BVCEV

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

hFE

fT

VEB=5.0V

VEB=4.0V

IC=100μA, VBE=1.5V

IC=10mA

IE=100μA

IC=500mA, IB=50mA (2N5320)

IC=500mA,

VCE=4.0V,

VCE=2.0V,

IB=50mA (2N5321)

IB=50mA (2N5322)

IB=50mA (2N5323)

IC=500mA

IC=1.0A

-

100

75

6.0

-

30

10

50

0.1

-

0.5

-

0.7

-

1.1

150

-

2N5321

2N5323

MIN

MAX

-

5.0

-

75

50

5.0

-

40

-

50

-

0.5

-

0.8

-

1.2

1.4

250

-

UNITS

μA

V

VCE=4.0V, IC=50mA, f=10MHz

MHz

R4 (11-June 2012)

2N5323TIN/LEAD Related Products

	2N5323TIN/LEAD	2N5320TIN/LEAD	2N5320LEADFREE	2N5323LEADFREE	2N5321LEADFREE	2N5322LEADFREE	2N5321TIN/LEAD
Description	Small Signal Bipolar Transistor, 2A I(C), PNP,	Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), NPN,
Is it Rohs certified?	incompatible	incompatible	conform to	conform to	conform to	conform to	incompatible
package instruction	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	,
Reach Compliance Code	_compli	_compli	compli	compli	compli	compli	not_compliant
Maximum collector current (IC)	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Configuration	Single	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	Single
Minimum DC current gain (hFE)	40	10	30	40	40	30	40
JESD-609 code	e0	e0	e3	e3	e3	e3	e0
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	260	260	260	260	NOT SPECIFIED
Polarity/channel type	PNP	NPN	NPN	PNP	NPN	PNP	NPN
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	10	10	10	10	NOT SPECIFIED
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz
Base Number Matches	1	1	1	1	1	1	-
Is it lead-free?	-	Contains lead	Lead free	Lead free	Lead free	Lead free	-
Parts packaging code	-	TO-39	TO-39	TO-39	TO-39	TO-39	-
Contacts	-	3	3	3	3	3	-
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	-
Collector-emitter maximum voltage	-	75 V	75 V	50 V	50 V	75 V	-
JEDEC-95 code	-	TO-39	TO-39	TO-39	TO-39	TO-39	-
JESD-30 code	-	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	-
Number of components	-	1	1	1	1	1	-
Number of terminals	-	3	3	3	3	3	-
Package body material	-	METAL	METAL	METAL	METAL	METAL	-
Package shape	-	ROUND	ROUND	ROUND	ROUND	ROUND	-
Package form	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-
Terminal form	-	WIRE	WIRE	WIRE	WIRE	WIRE	-
Terminal location	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	-
Maximum off time (toff)	-	800 ns	800 ns	1000 ns	800 ns	1000 ns	-
Maximum opening time (tons)	-	80 ns	80 ns	100 ns	80 ns	100 ns	-
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-

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