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NEZ1414-3E

Description
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, X17, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size43KB,4 Pages
ManufacturerCalifornia Eastern Labs
Websitehttp://www.cel.com/
Download Datasheet Parametric View All

NEZ1414-3E Overview

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, X17, 2 PIN

NEZ1414-3E Parametric

Parameter NameAttribute value
MakerCalifornia Eastern Labs
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage10 V
Maximum drain current (ID)1.1 A
FET technologyMETAL SEMICONDUCTOR
highest frequency bandKU BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
3 W 14 GHz INTERNALLY NEZ1414-3E
MATCHED POWER GaAs MESFET
FEATURES
• HIGH OUTPUT POWER:
34.5 dBm TYP
• HIGH LINEAR GAIN:
7.5 dB TYP
• HIGH EFFICIENCY:
30% TYP
• INDUSTRY STANDARD PACKAGING
• INTERNALLY MATCHED FOR OPTIMUM
PERFORMANCE IN 14.0 TO 14.5 GHz BAND
GATE
SOURCE
9.7
±
0.13
2.74
±
0.1
R 0.65
DRAIN
0.5±0.07
13
±
0.1
16.5
±
0.13
3.0
±
0.2
9
±
0.3
0.2 MAX
8.25
±
0.15
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE X-17
DESCRIPTION
The NEZ1414-3E is a Ku band GaAs MESFET designed for
transmit amplifiers used in VSAT terminals. The device is
internally matched for the 14.0 to 14.5 GHz band and can
deliver 3 W of output power when biased with 10 V. The device
incorporates a Wsi (tungsten silicide) gate structure for high
reliability, SiO
2
glassivation for surface stability, and a plated
heat sink for reduced thermal resistance.
The NEZ1414-3E transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
1.8
±
0.1
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
SYMBOLS
P
1dB
G
L
CHARACTERISTICS
Power Out at 1dB Compression
Linear Gain
= 25°C)
NEZ1414-3E
UNITS
dBm
dB
%
A
A
V
V
°C/W
0.7
-3.0
MIN
33.5
7.0
TYP
34.5
7.5
30
0.9
1.6
-1.3
15
5.5
7.0
1.1
2.5
-0.5
f = 14.0 to 14.5 GHz
V
DS
= 10 V
I
DSQ
= 0.7 A
Rg = 100
V
DS
= 1.5 V, V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 40 mA
I
GD
= 40 mA
Channel to Case
MAX
TEST CONDITIONS
η
ADD
I
DS
I
DSS
V
P
BVGD
R
TH
Power Added Efficiency, P
IN
= 32.0 dBM
Drain Current
Saturated Drain Current
Pinch-off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
California Eastern Laboratories
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