BSS 84
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
GS(th)
= -0.8...-2.0 V
Pin 1
G
Type
BSS 84
Type
BSS 84
BSS 84
Pin 2
S
Marking
SPs
Pin 3
D
V
DS
-50 V
I
D
-0.13 A
R
DS(on)
10
Ω
Package
SOT-23
Ordering Code
Q62702-S568
Q67000-S243
Tape and Reel Information
E6327
E6433
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
-50
-50
Unit
V
V
DS
V
DGR
V
GS
I
D
R
GS
= 20 kΩ
Gate source voltage
Continuous drain current
±
20
A
-0.13
T
A
= 30 °C
DC drain current, pulsed
I
Dpuls
-0.52
T
A
= 25 °C
Power dissipation
P
tot
0.36
W
T
A
= 25 °C
Semiconductor Group
1
18/02/1997
BSS 84
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium
15 mm x 16.7 mm x 0.7 mm
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
350
≤
285
E
55 / 150 / 56
Unit
°C
K/W
T
j
T
stg
R
thJA
Therminal resistance, chip-substrate- reverse side
1)
R
thJSR
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
-50
-
-1.5
-0.1
-2
-
-1
5
-
-2
V
V
GS
= 0 V,
I
D
= -0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
-0.8
V
GS=
V
DS,
I
D
= -1 mA
Zero gate voltage drain current
I
DSS
-
-
-
-1
-60
-0.1
µA
V
DS
= -50 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -50 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= -25 V,
V
GS
= 0 V,
T
j
= 25 °C
Gate-source leakage current
I
GSS
-
-10
nA
Ω
-
10
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
R
DS(on)
V
GS
= -10 V,
I
D
= -0.13 A
Semiconductor Group
2
18/02/1997
BSS 84
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.05
0.085
30
17
8
-
S
pF
-
40
25
12
ns
-
7
10
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= -0.13 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.27 A
R
GS
= 50
Ω
Rise time
t
r
-
12
18
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.27 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
10
13
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.27 A
R
GS
= 50
Ω
Fall time
t
f
-
20
27
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.27 A
R
GS
= 50
Ω
Semiconductor Group
3
18/02/1997
BSS 84
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
-0.9
-0.13
-0.52
V
-
-1.2
Values
typ.
max.
Unit
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -0.26 A,
T
j
= 25 °C
Semiconductor Group
4
18/02/1997
BSS 84
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
-10 V
-0.14
A
-0.12
0.40
W
P
tot
0.32
0.28
0.24
I
D
-0.11
-0.10
-0.09
-0.08
0.20
0.16
0.12
0.08
0.04
0.00
0
20
40
60
80
100
120
°C
160
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0.00
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25°C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
-60
V
-58
V
(BR)DSS
-57
-56
-55
-54
-53
-52
-51
-50
-49
-48
-47
-46
-45
-60
-20
20
60
100
°C
160
T
j
Semiconductor Group
5
18/02/1997
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