EEWORLDEEWORLDEEWORLD

Part Number

Search

RJK4536DP3-A0J2

Description
450V - 2.8A - MOS FET High Speed Power Switching
File Size68KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Compare View All

RJK4536DP3-A0J2 Overview

450V - 2.8A - MOS FET High Speed Power Switching

Preliminary Datasheet
RJK4536DP3-A0
450V - 2.8A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 3.77
typ. (at I
D
= 1.4 A, V
GS
= 10 V, Ta = 25C)
Low drive current
High density mounting
R07DS0839EJ0100
Rev.1.00
Jul 05, 2011
Outline
RENESAS Package code: PRSP0004ZB-A
Package name: SOT-223
D
4
3
2
1
S
G
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
Note1
I
D
I
D (pulse)
Note1
I
DR
Note2
I
DR (pulse)
Tch
Tstg
Note2
Ratings
450
±30
2.8
5.6
2.8
5.6
150
–55 to +150
Unit
V
V
A
A
A
A
C
C
Notes: 1. Limited by Tch max.. Value at Tc = 25C
2. Pulse width limited by safe operating area.
R07DS0839EJ0100 Rev.1.00
Jul 05, 2011
Page 1 of 3

RJK4536DP3-A0J2 Related Products

RJK4536DP3-A0J2 RJK4536DP3-A0
Description 450V - 2.8A - MOS FET High Speed Power Switching 450V - 2.8A - MOS FET High Speed Power Switching

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 739  785  299  340  794  15  16  7  24  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号