Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1505
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SB1064
·Low
collector saturation voltage
APPLICATIONS
·Designed
for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
50
5
3
4.5
0.5
30
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD1505
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=1mA ,I
B
=0
50
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=50μA ,I
E
=0
60
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=50μA ,I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2A; I
B
=0.2A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=2A; I
B
=0.2A
1.5
V
μA
I
CBO
Collector cut-off current
V
CB
=40V; I
E
=0
1.0
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
1.0
μA
h
FE
DC current gain
I
C
=0.5A ; V
CE
=3V
60
320
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V,f=1MHz
40
pF
f
T
Transition frequency
I
C
=0.5A ; V
CE
=5V
90
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1505
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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