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HY51V17804BSLJ-60

Description
EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
Categorystorage    storage   
File Size384KB,8 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY51V17804BSLJ-60 Overview

EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

HY51V17804BSLJ-60 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSK Hynix
Objectid1439199352
Parts packaging codeSOJ
package instruction0.300 INCH, PLASTIC, SOJ-28
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
compound_id9703239
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J28
JESD-609 codee0
length18.42 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ28,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle2048
Maximum seat height3.76 mm
self refreshYES
Maximum standby current0.0002 A
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
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